7
LT1113
1113fb
FREQUENCY (Hz)
0.01
VOLTAGE
GAIN
(dB)
180
140
100
60
20
–20
1M
1113 G10
1
100
10k
100M
TA = 25°C
VS = ±15V
FREQUENCY (MHz)
0.1
VOLTAGE
GAIN
(dB)
50
40
30
20
10
0
–10
1
10
100
1113 G12
TA = 25°C
VS = ±15V
CL = 10pF
60
80
100
120
140
160
180
PHASE
GAIN
PHASE
SHIFT
(DEG)
5V/DIV
20mV/DIV
Voltage Gain vs Frequency
CHIP TEMPERATURE (
°C)
–75
10
9
8
7
6
5
4
3
2
1
0
–25
50
75
1113 G11
–50
25
100 125
0
VS = ±15V
VO = ±10V, RL = 1k
VO = ±12V, RL = 10k
VOLTAGE
GAIN
(V/
V)
RL =10k
RL = 1k
Voltage Gain vs
Chip Temperature
Gain and Phase Shift vs
Frequency
1
s/DIV
AV = 1
CL = 10pF
VS = ±15V, ±5V
1113 G13
Small-Signal Transient Response
2
s/DIV
AV = 1
CL = 10pF
VS = ±15V
1113 G14
Large-Signal Transient Response
SUPPLY VOLTAGE (V)
0
SUPPLY
CURRENT
PER
AMPLIFIER
(mA)
±20
1113 G15
±5
±10
±15
6
5
4
25
°C
–55
°C
125
°C
Supply Current vs Supply Voltage
Output Voltage Swing vs
Load Current
Capacitive Load Handling
Slew Rate and Gain Bandwidth
Product vs Temperature
CC
HARA TERISTICS
UW
A
TYPICALPERFOR
CE
OUTPUT CURRENT (mA)
–10
OUTPUT
VOLTAGE
SWING
(V)
V+ – 0.8
–1.0
–1.2
– 1.4
–1.6
1.4
1.2
1.0
0.8
0.6
V– +0.4
6
1113 G16
–8
–2
2
10
–6 –4
04
8
25
°C
–55
°C
125
°C
–55
°C
25
°C
125
°C
VS = ±5V TO ±20V
ISINK
ISOURCE
CAPACITIVE LOAD (pF)
0.1
OVERSHOOT
(%)
50
40
30
20
10
0
1000
1113 G17
1
10
100
10000
VS = ±15V
TA = 25°C
RL ≥ 10k
VO = 100mVP-P
AV = +10, RF = 10k, CF = 20pF
AV = 1
AV = 10
TEMPERATURE (
°C)
–75
6
5
4
3
2
1
0
–25
50
75
1113 G18
–50
25
100 125
0
SLEW
RATE
(V/
s)
SLEW RATE
GBW
12
10
8
6
4
2
0
GAIN
BANDWIDTH
PRODUCT
(f
O
=
100kHz)(MHz)