參數(shù)資料
型號(hào): LT1619EMS8
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: Low Voltage Current Mode PWM Controller
中文描述: 1.5 A SWITCHING CONTROLLER, 360 kHz SWITCHING FREQ-MAX, PDSO8
封裝: PLASTIC, MSOP-8
文件頁數(shù): 7/20頁
文件大?。?/td> 256K
代理商: LT1619EMS8
7
LT1619
1619fa
OPERATIOU
or less than the number specified in Table 1 are accept-
able. The maximum duty cycle is essentially unaffected by
synchronization.
The device will go into shutdown mode if the S/S pin
voltage stays below the shutdown threshold of 0.45V for
Inductor
The value of the inductor is usually selected so that the
peak-to-peak ripple current is less than 30% of the maxi-
mum inductor current. The inductor should be able to
handle the maximum inductor current at full load without
saturation. Powder iron cores are not suitable for high
frequency switch mode power supply applications be-
cause of their high core losses. Ferrite cores have very low
core losses and are the material of choice for high fre-
quency DC/DC converters.
Power MOSFET Driver
The LT1619 is capable of driving a low side N-channel
power MOSFET with up to 60nC of total gate charge (Q
g
).
An external driver is recommended for MOSFETs with
greater than 80nC of total gate charge. The peak gate drive
current varies from 0.5A with V
DRV
= 2.5V to 1.2A with
V
DRV
= 10V. The MOSFET driver is capable of charging the
gate of the power MOSFET to within 350mV of the upper
gate drive supply rail (DRV). It can also pull the gate of the
MOSFET to within 100mV of ground during turnoff. The
upper supply rail of the gate drive is brought out as a device
pin (DRV) for design flexibility. In a boost converter
design, the DRV pin can be tied to the converter output if
the minimum input voltage is insufficient to fully enhance
the power MOSFET. During start-up, the MOSFET is driven
with a gate voltage starting from V
IN
– V
D
(V
D
is the
forward voltage of the rectifying diode). As the output
voltage rises, the gate drive also increases until steady
state is reached. If the steady-state converter output
voltage exceeds the maximum allowable gate source
voltage and the input voltage is sufficient to enhance the
MOSFET, the DRV pin is tied to the input supply. For a
SEPIC converter, the DRV pin can be tied to the input or
diode OR’ed from the input and the output (Figure 4).
Figure 4. SEPIC Converter with Diode OR’ed Gate Drive Supply
more than 33
μ
s. This shutdown delay is reset whenever
the S/S pin voltage rises above the shutdown threshold.
Applying a logic low signal at the S/S pin causes the gate
drive output to go low. Although all circuits in the LT1619
are disabled, the pull-down circuit in the MOSFET buffer is
still biased on. It is capable of shunting any leakage or
transient current at the GATE pin to ground, eliminating
the need for an external bleed resistor. The LT1619 con-
sumes 15
μ
A in shutdown.
The LT1619 is guaranteed to start with a minimum V
IN
of
1.85V. Comparator A2 senses the input voltage and gen-
erates an undervoltage lockout (UVLO) signal if V
IN
falls
below this minimum. While in undervoltage lockout, V
C
is
pulled low and the LT1619 stops switching. The supply
current drawn by the device falls to 140
μ
A.
Table 1. Maximum Allowable Rise Time of Synchronization
Pulse. Rise Time Can Be Slower if Clock Amplitude is Higher
SYNCHRONIZATION
AMPLITUDE (V)
1.2
1.5
2.0
2.5
3.0
MAXIMUM ALLOWABLE
RISE TIME (ns)
120
220
350
470
530
DRV
V
IN
V
OUT
R
S
1619 F03
LT1619
GND
+
+
APPLICATIOU
W
U
U
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