參數(shù)資料
型號(hào): LTC1155CJ8
廠商: LINEAR TECHNOLOGY CORP
元件分類: MOSFETs
英文描述: Dual High Side Micropower MOSFET Driver
中文描述: 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8
封裝: HERMETIC SEALED, DIP-8
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 340K
代理商: LTC1155CJ8
4
LTC1155
C
HARA TERISTICS
U
A
TYPICAL PERFOR
CE
Turn ON Time
Turn OFF Time
Short-Circuit Turn OFF Delay Time
SUPPLY VOLTAGE (V)
0
0
T
μ
s
600
700
800
900
1000
5
10
20
1155 G07
100
200
300
400
500
15
C
GATE
= 1000pF
V
GS
= 5V
V
GS
= 2V
SUPPLY VOLTAGE (V)
0
0
T
30
35
40
45
50
5
10
20
1155 G08
μ
5
10
15
20
25
15
C
= 100pF
TIME FOR V
GATE
< 1V
SUPPLY VOLTAGE (V)
0
0
T
μ
s
30
35
40
45
50
5
10
20
1155 G09
5
10
15
20
25
15
V
= V
–1V
NO EXTERNAL DELAY
C
= 1000pF
TIME FOR V
GATE
< 1V
Standby Supply Current
Supply Current Per Side (ON)
Input ON Threshold
TEMPERATURE (
°
C)
–50
0
S
μ
A
5
10
25
35
40
50
–25
0
25
50
1155 G10
15
20
30
45
75
100
125
V
S
= 5V
V
S
= 18V
TEMPERATURE (
°
C)
–50
0
S
μ
A
100
200
500
700
800
1000
–25
0
25
50
1155 G11
300
400
600
900
75
100
125
V
S
= 12V
V
S
= 5V
TEMPERATURE (
°
C)
–50
0.4
I
0.6
0.8
1.4
1.8
2.0
2.4
–25
0
25
50
1155 G12
1.0
1.2
1.6
2.2
75
100
125
V
S
= 18V
V
S
= 5V
Input Pin
The LTC1155 logic input is a high impedance CMOS gate
and should be grounded when not in use. These input pins
have ESD protection diodes to ground and supply and,
therefore, should not be forced beyond the power supply
rails.
Gate Drive Pin
The gate drive pin is either driven to ground when the
switch is turned OFF or driven above the supply rail when
the switch is turned ON. This pin is a relatively high
impedance when driven above the rail (the equivalent of a
PI
FU
CTIO
N
S
U
U
few hundred k
). Care should be taken to minimize any
loading of this pin by parasitic resistance to ground or
supply.
Supply Pin
The supply pin of the LTC1155 serves two vital purposes.
The first is obvious: it powers the input, gate drive,
regulation and protection circuitry. The second purpose is
less obvious: it provides a Kelvin connection to the top of
the two drain sense resistors for the internal 100mV
reference. The supply pin should be connected directly to
the power supply source as close as possible to the top of
the two sense resistors.
相關(guān)PDF資料
PDF描述
LTC1155CN8 Dual High Side Micropower MOSFET Driver
LTC1155CS8 Dual High Side Micropower MOSFET Driver
LTC1155 Octal Bus Transceivers With 3-State Outputs 20-PDIP 0 to 70
LTC1155M Dual High Side Micropower MOSFET Driver
LTC1155MJ8 Dual High Side Micropower MOSFET Driver
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTC1155CN8 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1155CN8#PBF 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)
LTC1155CS8 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1155CS8#PBF 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)
LTC1155CS8#TR 功能描述:IC DRIVER MOSF HISIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端,獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大(自引導(dǎo)啟動(dòng)):600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁(yè)面:1381 (CN2011-ZH PDF)