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參數(shù)資料
| 型號： | LTC1155CJ8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Dual High Side Micropower MOSFET Driver |
| 中文描述： | 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDIP8 |
| 封裝： | HERMETIC SEALED, DIP-8 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LTC1155CJ8 |
6
LTC1155
U
S
A
Protecting the MOSFET
The MOSFET is protected against destruction by removing
drive from the gate as soon as an overcurrent condition is
detected. Resistive and inductive loads can be protected
with no external time delay. Large capacitive or lamp
loads, however, require that the overcurrent shutdown
function be delayed long enough to start the load but short
enough to ensure the safety of the MOSFET.
O
PPLICATI
U
U
Gate Charge Pump
Gate drive for the power MOSFET is produced by an
adaptive charge pump circuit that generates a gate voltage
substantially higher than the power supply voltage. The
charge pump capacitors are included on-chip and, there-
fore, no external components are required to generate the
gate drive.
Drain Current Sense
The LTC1155 is configured to sense the drain current of
the power MOSFET in high side applications. An internal
100mV reference is compared to the drop across a sense
resistor (typically 0.002
to 0.1
) in series with the drain
lead. If the drop across this resistor exceeds the internal
100mV threshold, the input latch is reset and the gate is
quickly discharged by a large N-channel transistor.
Controlled Gate Rise and Fall Times
When the input is switched ON and OFF, the gate is
charged by the internal charge pump and discharged in a
controlled manner. The charge and discharge rates have
been set to minimize RFI and EMI emissions in normal
operation. If a short circuit or current overload condition
is encountered, the gate is discharged very quickly (typi-
cally a few microseconds) by a large N-channel transistor.
OPERATIOU
Example Calculations
Consider the circuit of Figure 1. A power MOSFET is driven
by one side of an LTC1155 to switch a high inrush current
load. The drain sense resistor is selected to limit the
maximum DC current to 3.3A.
R
SEN
= V
SEN
/I
TRIP
= 0.1/3.3A
= 0.03
A time delay is introduced between R
SEN
and the drain
sense pin of the LTC1155 which provides sufficient delay
to start a high inrush load such as large supply capacitors.
In this example circuit, we have selected the IRLZ34
because of its low R
DS(ON )
(0.05
with V
GS
= 5V). The FET
1155 F01
IRLZ34
LOAD
LTC1155
GND
GND
G1
DS1
V
S
IN1
V
S
= 5.0V
C
0.22
μ
F
R
0.03
R
270k
Figure 1. Adding an RC Delay
drops 0.1V at 2A and, therefore, dissipates 200mW in
normal operation (no heat sinking required).
If the output is shorted to ground, the current through the
FET rises rapidly and is limited by the R
DS(ON)
of the FET,
the drain sense resistor and the series resistance be-
tween the power supply and the FET. Series resistance in
the power supply can be substantial and attributed to
many sources including harness wiring, PCB traces,
supply capacitor ESR, transformer resistance or battery
resistance.
相關PDF資料 |
PDF描述 |
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| LTC1155CN8 | Dual High Side Micropower MOSFET Driver |
| LTC1155CS8 | Dual High Side Micropower MOSFET Driver |
| LTC1155 | Octal Bus Transceivers With 3-State Outputs 20-PDIP 0 to 70 |
| LTC1155M | Dual High Side Micropower MOSFET Driver |
| LTC1155MJ8 | Dual High Side Micropower MOSFET Driver |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1155CN8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1155CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1155CS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1155CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1155CS8#TR | 功能描述:IC DRIVER MOSF HISIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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