參數(shù)資料
型號(hào)： LTC1156C
廠商： Linear Technology Corporation
英文描述： Quad High Side Micropower MOSFET Driver with Internal Charge Pump
中文描述： 四高端微MOSFET驅(qū)動(dòng)器，內(nèi)置電荷泵
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 231K
代理商： LTC1156C
1
LTC1156
Quad High Side
Micropower MOSFET Driver
with Internal Charge Pump
D
U
ESCRIPTIO
SUPPLY VOLTAGE (V)
0
0
S
μ
A
10
30
40
50
100
70
5
10
LTC1156 G01
20
80
90
60
15
20
V
IN1
= V
IN2
= V
IN3
= V
IN4
= 0V
T
J
= 25°C
Laptop Computer Power Management
Standby Supply Current
5V
0.1
μ
F
100k
*30m
1156 TA01
ALL COMPONENTS SHOWN ARE SURFACE MOUNT. MINIMUM PARTS COUNT
SHOWN. CURRENT LIMITS CAN BE SET SEPARATELY AND TAILORED TO
INDIVIDUAL LOAD CHARACTERISTICS.
* IMS026 INTERNATIONAL MANUFACTURING SERVICES, INC. (401) 683-9700
V
S
V
S
DS1
DS2
DS3
DS4
IN1
IN2
IN3
IN4
G1
G2
G3
G4
CONTROL
LOGIC
OR
μ
P
+
10
μ
F
5V
Si9956DY
Si9956DY
GND GND
LTC1156
FLOPPY DISK
DRIVE
HARD DISK
DRIVE
DISPLAY
PERIPHERAL
U
A
O
PPLICATI
TYPICAL
S
FEATURE
I
No External Charge Pump Components
I
Fully Enhances N-Channel Power MOSFETs
I
16 Microamps Standby Current
I
95 Microamps ON Current
I
Wide Power Supply Range 4.5V to 18V
I
Controlled Switching ON and OFF Times
I
Replaces P-Channel High Side Switches
I
Compatible with Standard Logic Families
I
Available in 16-pin SOL Package
U
S
A
O
PPLICATI
The LTC1156 quad High side gate driver allows using low
cost N-channel FETs for high side switching applications.
An internal charge pump boosts the gate drive voltage
above the positive rail, fully enhancing an N-channel MOS
switch with no external components. Micropower opera-
tion, with 16
μ
A standby current and 95
μ
A operating
current, allows use in virtually all systems with maximum
efficiency.
Included on chip is independent over-current sensing to
provide automatic shutdown in case of short circuits. A
time delay can be added to the current sense to prevent
false triggering on high in-rush current loads.
The LTC1156 operates off of a 4.5V to 18V supply and is
well suited for battery-powered applications, particularly
where micropower “sleep” operation is required.
The LTC1156 is available in both 16-pin DIP and 16-pin
SOL packages.
I
Laptop Computer Power Switching
I
SCSI Termination Power Switching
I
Cellular Telephone Power Management
I
P-Channel Switch Replacement
I
Battery Charging and Management
I
Low Frequency H-Bridge Driver
I
Stepper Motor and DC Motor Control
相關(guān)PDF資料
PDF描述
LTC1156 Quad High Side Micropower MOSFET Driver with Internal Charge Pump
LTC1156CN Quad High Side Micropower MOSFET Driver with Internal Charge Pump
LTC1156CS Quad High Side Micropower MOSFET Driver with Internal Charge Pump
LTC1157C 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver
LTC1157 Octal Bus Transceivers With 3-State Outputs 20-SO 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTC1156CN 功能描述:IC MOSFET DVR HI-SIDE QUAD 16DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1156CN#PBF 功能描述:IC MOSFET DVR HI-SIDE QUAD 16DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1156CS 制造商:LINER 制造商全稱:Linear Technology 功能描述:Quad High Side Micropower MOSFET Driver with Internal Charge Pump
LTC1156CSW 功能描述:IC MOSFET DVR HI-SIDE QUAD16SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1156CSW#PBF 功能描述:IC MOSFET DVR HI-SIDE QUAD16SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
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