參數(shù)資料
型號(hào)： LTC1982ES6
廠商： LINEAR TECHNOLOGY CORP
元件分類： 穩(wěn)壓器
英文描述： Single and Dual Micropower High Side Switch Controllers in SOT-23
中文描述： SWITCHED CAPACITOR REGULATOR, 600 kHz SWITCHING FREQ-MAX, PDSO6
封裝： PLASTIC, SOT-23, 6 PIN
文件頁數(shù)： 1/8頁
文件大小： 154K
代理商： LTC1982ES6
LTC1981/LTC1982
1
APPLICATIU
DESCRIPTIOU
FEATURES
The LTC
1981/LTC1982 are low-power, self-contained
N-channel MOSFET drivers. An internal voltage tripler
allows gates to be driven without the use of any external
components. Internal regulation circuitry allows quies-
cent current to drop to 10
μ
A per driver (20
μ
A for LTC1981)
once the gates are charged.
Low quiescent current and low shutdown current (under
1
μ
A) make these parts ideal for battery and other power
constrained systems. The wide input voltage range ac-
commodates a variety of battery/input configurations.
Gate drive is internally clamped to 7.5V providing protec-
tion to the external MOSFET gate. The MOSFETs can be
driven in either high side or low side mode.
The LTC1981 single driver version also includes a gate
drive ready pin and twice the drive current capacity of the
dual driver LTC1982.
The LTC1981 is available in a 5-pin SOT-23. The LTC1982
is available in a 6-pin SOT-23.
I
Cellular Telephones
I
Portable POS Terminal
I
Handheld Battery Powered Equipment
, LTC and LT are registered trademarks of Linear Technology Corporation.
I
No External Components Required
I
Internal Voltage Triplers Produce High Side
Gate Drive for Logic Level FETs
I
Ultralow Power:
10
μ
A Per Driver ON Current (LTC1982)
20
μ
A ON Current (LTC1981)
<1
μ
A Shutdown Current
I
V
CC
Range: 1.8V to 5V
I
Gate Drive Outputs Driven to Ground During
Shutdown
I
Gate Drive Outputs Internally Clamped to 7.5V Max
I
“Gate Drive Ready” Output (LTC1981)
I
Ultrasmall Application Circuit
I
5-Pin SOT-23 Package (LTC1981)
I
6-Pin SOT-23 Package (LTC1982)
Single and Dual Micropower
High Side Switch Controllers
in SOT-23
V
CC
GATE
SHDN
GND
GDR
LTC1981
LOAD
+
10
μ
F
GATE
DRIVE
READY
SHDN
V
CC
1.8V TO 5.0V
5
4
1
2
3
1981/82 TA01
100k
Q1
Si3442DV
V
CC
GATE 1
LTC1982
GATE 2
SHDN 1
SHDN 2
GND
LOAD 1
LOAD 2
+
10
μ
F
SHDN 1
SHDN 2
V
CC
1.8V TO 5.0V
6
5
4
1
2
3
1981/82 TA02
Q1
1/2 Si6925DQ
Q2
1/2 Si6925DQ
TYPICAL APPLICATIO
S
U
Single High Side Switch Controller
Dual High Side Switch Controller
相關(guān)PDF資料
PDF描述
LTC1981 Single and Dual Micropower High Side Switch Controllers in SOT-23
LTC1981ES5 Single and Dual Micropower High Side Switch Controllers in SOT-23
LTC1982 Single and Dual Micropower High Side Switch Controllers in SOT-23
LTC1983-3 100mA REGULATED CHARGE-PUMP INVERTERS IN THINSOT
LTC1983ES6-3 100mA REGULATED CHARGE-PUMP INVERTERS IN THINSOT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTC1982ES6#PBF 制造商:Linear Technology 功能描述:MOSFET DRVR 2-OUT Hi Side 6-Pin TSOT-23 制造商:Linear Technology 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOT-23-6, Device Type:High Side, Module Configuration:High Side, Supply Voltage Min:1.8V, Supply Voltage Max:5.5V, Driver Case Style:SOT-23, No. of Pins:6, Input Delay:110s, Output Delay:12s , RoHS Compliant: Yes 制造商:Linear Technology 功能描述:DP-Power Controller, CUT TAPE Dual Micropower Hi Side Sw Controller
LTC1982ES6#TR 功能描述:IC CTRLR SW DUAL MCRPWR SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LTC1982ES6#TRM 功能描述:IC CTRLR SW HI-SIDE DUAL SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF)
LTC1982ES6#TRMPBF 功能描述:IC CTRLR SW HI-SIDE SGL SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF)
LTC1982ES6#TRPBF 功能描述:IC CTRLR SW HI-SIDE DUAL SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
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