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參數(shù)資料
| 型號(hào)： | LTC1982ES6 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Single and Dual Micropower High Side Switch Controllers in SOT-23 |
| 中文描述： | SWITCHED CAPACITOR REGULATOR, 600 kHz SWITCHING FREQ-MAX, PDSO6 |
| 封裝： | PLASTIC, SOT-23, 6 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | LTC1982ES6 |
LTC1981/LTC1982
5
OPERATIOU
Charge Pump
To fully enhance the external N-channel switches, internal
charge pumps are used to boost the output gate drive to
approximately 2.5 times the supply voltage, or 7.25V,
whichever is less. A feedback network is used to regulate
the output gate drive. This keeps the supply current low in
addition to providing a maximum output voltage limit. The
reason for the maximum output voltage limit is to avoid
switch gate source breakdown due to excessive gate
overdrive.
The gate drive outputs (GATE 1, GATE 2, or GATE) are
controlled by the shutdown input pins (SHDN 1, SHDN 2
or SHDN). A logic high input on one of the shutdown input
pins enables the corresponding charge pump and drives
the related gate drive output pin high. A logic low input on
one of the shutdown input pins disables the correspond-
ing charge pump and drives the related gate drive output
pin low. If shutdown input on the LTC1981 is low or both
of the shutdown input pins on the LTC1982 are low, the
part will be placed into a low current shutdown mode
(<1
μ
A).
Gate Drive Ready (LTC1981 Only)
The gate drive ready pin (GDR) is used to indicate when the
gate drive output (GATE) is greater than 90% of its final
value. This can be useful in applications that require
knowledge of the state of the gate drive for initialization
purposes or as fault detection should something be load-
ing the gate drive down.
BLOCK DIAGRW
M
LTC1981 Single High Side Switch Driver
LTC1982 Dual High Side Switch Driver
REGULATING
CHARGE PUMP
EN
+
–
+
–
GATE
GDR
V
CC
REF
SHDN
1981/82 BD01
15k
REGULATING
CHARGE
PUMP 1
EN
GATE 1
SHDN 1
REGULATING
CHARGE
PUMP 2
EN
GATE 2
SHDN 2
1981/82 BD02
30k
30k
GATE 2(Pin 4):
Gate Drive Output to an External High Side
Switch. Fully enhanced by internal charge pump. Con-
trolled by the SHDN 2 input pin. Output voltage on this pin
will be approximately 2.5 times V
CC
or 7.25V, whichever is
less.
GATE 1 (Pin 5):
Gate Drive Output to an External High Side
Switch. Fully enhanced by internal charge pump. Con-
trolled by the SHDN 1 input pin. Output voltage on this pin
will be approximately 2.5 times V
CC
or 7.25V, whichever is
less.
V
CC
(Pin6):
Input Supply Voltage. Range from 1.8V to5.5V.
PI
FU
CTIO
N
S
U
U
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LTC1981 | Single and Dual Micropower High Side Switch Controllers in SOT-23 |
| LTC1981ES5 | Single and Dual Micropower High Side Switch Controllers in SOT-23 |
| LTC1982 | Single and Dual Micropower High Side Switch Controllers in SOT-23 |
| LTC1983-3 | 100mA REGULATED CHARGE-PUMP INVERTERS IN THINSOT |
| LTC1983ES6-3 | 100mA REGULATED CHARGE-PUMP INVERTERS IN THINSOT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC1982ES6#PBF | 制造商:Linear Technology 功能描述:MOSFET DRVR 2-OUT Hi Side 6-Pin TSOT-23 制造商:Linear Technology 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOT-23-6, Device Type:High Side, Module Configuration:High Side, Supply Voltage Min:1.8V, Supply Voltage Max:5.5V, Driver Case Style:SOT-23, No. of Pins:6, Input Delay:110s, Output Delay:12s , RoHS Compliant: Yes 制造商:Linear Technology 功能描述:DP-Power Controller, CUT TAPE Dual Micropower Hi Side Sw Controller |
| LTC1982ES6#TR | 功能描述:IC CTRLR SW DUAL MCRPWR SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1982ES6#TRM | 功能描述:IC CTRLR SW HI-SIDE DUAL SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1982ES6#TRMPBF | 功能描述:IC CTRLR SW HI-SIDE SGL SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1982ES6#TRPBF | 功能描述:IC CTRLR SW HI-SIDE DUAL SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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