參數(shù)資料
型號: LTC2408I
廠商: Linear Technology Corporation
英文描述: 20-Bit Universal Bus Driver With 3-State Outputs 56-TVSOP -40 to 85
中文描述: 4-/8-Channel 24位ADC的無延遲uPower
文件頁數(shù): 25/36頁
文件大小: 351K
代理商: LTC2408I
25
LTC2404/LTC2408
APPLICATIO
S I
FOR
ATIO
U
Reference Current (V
REF
)
Similar to the analog input, the reference input has a
dynamic input current. This current has negligible effect
on the offset. However, the reference current at V
IN
= V
REF
is similar to the input current at full-scale. For large values
of reference capacitance (C
VREF
> 0.01
μ
F), the full-scale
error shift is 0.3ppm/
of external reference resistance
independent of the capacitance at V
REF
, see Figure 19. If
the capacitance tied to V
REF
is small (C
VREF
< 0.01
μ
F), an
input resistance of up to 20k (20pF parasitic capacitance
at V
REF
) may be tolerated, see Figure 20.
Unlike the analog input, the integral nonlinearity of the
device can be degraded with excessive external RC time
W
U
U
RESISTANCE AT V
REF
(
)
1
–10
I
0
10
20
30
40
50
10
100
1k
10k
24048 F21
100k
V
CC
= 5V
V
REF
= 5V
T
A
= 25
°
C
C
VREF
= 0pF
C
VREF
C
VREF
= 1000pF
C
VREF
= 0.01
μ
F
Figure 22. INL Error vs R
VREF
(Large C)
Figure 21. INL Error vs R
VREF
(Small C)
RESISTANCE AT V
REF
(
)
0
–20
I
0
40
60
80
400
800
1000
160
24048 F22
20
200
600
100
120
140
C
VREF
= 0.01
μ
F
C
VREF
= 0.1
μ
F
VREF
= 1
μ
F
C
VREF
= 10
μ
F
V
CC
= 5V
V
REF
= 5V
T
A
= 25
°
C
Figure 20. Full-Scale Error vs R
VREF
(Small C)
Figure 19. Full-Scale Error vs R
VREF
(Large C)
RESISTANCE AT V
REF
(
)
0
0
F
100
200
300
400
500
600
200
400
600
800
24048 F19
1000
C
VREF
= 10
μ
F
C
VREF
= 0.01
μ
F
C
VREF
= 0.1
μ
F
V
CC
= 5V
V
REF
= 5V
V
IN
= 5V
T
A
= 25
°
C
C
VREF
= 1
μ
F
RESISTANCE AT V
REF
(
)
1
30
40
50
1k
24048 F20
20
10
10
100
100k
10k
0
–10
–20
F
V
CC
= 5V
V
REF
= 5V
V
IN
= 5V
T
A
= 25
°
C
C
VREF
= 100pF
C
VREF
= 1000pF
C
VREF
= 0.01
μ
F
C
VREF
= 0pF
constants tied to the reference input. If the capacitance at
node V
REF
is small (C
VREF
< 0.01
μ
F), the reference input
can tolerate large external resistances without reduction
in INL, see Figure 21. If the external capacitance is large
(C
VREF
> 0.01
μ
F), the linearity will be degraded by
0.15ppm/
independent of capacitance at V
REF
, see
Figure 22.
In addition to the dynamic reference current, the V
REF
ESD
protection diodes have a temperature dependent leakage
current. This leakage current, nominally 1nA (
±
10nA max),
results in a fixed full-scale shift of 10
μ
V for a 10k source
resistance.
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