參數(shù)資料
型號: LTC4440EMS8E
廠商: LINEAR TECHNOLOGY CORP
元件分類: MOSFETs
英文描述: High Speed, High Voltage High Side Gate Driver
中文描述: 2.4 A BUF OR INV BASED MOSFET DRIVER, PDSO8
封裝: PLASTIC, MSOP-8
文件頁數(shù): 2/12頁
文件大?。?/td> 236K
代理商: LTC4440EMS8E
2
LTC4440
4440i
Supply Voltage
V
CC
....................................................... –0.3V to 15V
BOOST – TS ......................................... –0.3V to 15V
INP Voltage............................................... –0.3V to 15V
BOOST Voltage (Continuous) ................... –0.3V to 95V
BOOST Voltage (100ms) ........................ –0.3V to 115V
TS Voltage (Continuous) ............................. –5V to 80V
TS Voltage (100ms)................................... –5V to 100V
ORDER PART
NUMBER
LTC4440EMS8E
T
JMAX
= 150
°
C,
θ
JA
= 40
°
C/W (NOTE 4)
EXPOSED PAD IS GND (PIN 9)
MUST BE SOLDERED TO PCB
ABSOLUTE
AXI
U
RATIU
W
W
W
PACKAGE/ORDER I
FOR
ATIO
W
U
U
(Note 1)
Peak Output Current < 1
μ
s (TG) ............................... 4A
Driver Output TG (with Respect to TS) ..... –0.3V to 15V
Operating Ambient Temperature Range
(Note 2).............................................. –40
°
C to 85
°
C
Junction Temperature (Note 3)............................ 150
°
C
Storage Ambient Temperature Range... –65
°
C to 150
°
C
Lead Temperature (Soldering, 10 sec)..................300
°
C
MS8E
PART MARKING
LTF9
1
2
3
4
INP
GND
V
CC
GND
8
7
6
5
TS
TG
BOOST
NC
TOP VIEW
9
MS8E PACKAGE
8-LEAD PLASTIC MSOP
ORDER PART
NUMBER
LTC4440ES6
S6
PART MARKING
LTZY
V
CC
1
GND 2
INP 3
6 BOOST
5 TG
4 TS
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC SOT-23
T
JMAX
= 150
°
C,
θ
JA
= 230
°
C/W
The
G
denotes specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25
°
C. V
CC
= V
BOOST
= 12V, V
TS
= GND = 0V, unless otherwise noted.
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
SYMBOL
Main Supply (V
CC
)
I
VCC
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
DC Supply Current
Normal Operation
UVLO
Undervoltage Lockout Threshold
INP = 0V
V
IN
< UVLO Threshold – 0.1V
V
CC
Rising
V
CC
Falling
Hysteresis
250
25
6.5
6.2
300
400
80
7.3
7.0
μ
A
μ
A
V
V
mV
UVLO
G
G
5.7
5.4
Bootstrapped Supply (BOOST – TS)
I
BOOST
DC Supply Current
Normal Operation
UVLO
UVLO
HS
Undervoltage Lockout Threshold
INP = 0V
V
BOOST
– V
TS
< UVLO
HS
– 0.1V, INP = 0V
V
BOOST
– V
TS
Rising
V
BOOST
– V
TS
Falling
Hysteresis
110
86
7.4
6.9
500
180
170
7.95
7.60
μ
A
μ
A
V
V
mV
G
G
6.75
6.25
Input Signal (INP)
V
IH
V
IL
V
IH
– V
IL
I
INP
High Input Threshold
Low Input Threshold
Input Voltage Hysteresis
Input Pin Bias Current
INP Ramping High
INP Ramping Low
G
1.3
0.85
1.6
1.25
0.350
±
0.01
2
V
V
V
G
1.6
±
2
μ
A
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