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參數(shù)資料
| 型號： | LTC4440EMS8E |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | MOSFETs |
| 英文描述： | High Speed, High Voltage High Side Gate Driver |
| 中文描述： | 2.4 A BUF OR INV BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MSOP-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 236K |
| 代理商： | LTC4440EMS8E |
7
LTC4440
4440i
APPLICATIOU
Overview
The LTC4440 receives a ground-referenced, low voltage
digital input signal to drive a high side N-channel power
MOSFET whose drain can float up to 100V above ground,
eliminating the need for a transformer between the low
voltage control signal and the high side gate driver. The
LTC4440 normally operates in applications with input
supply voltages (V
IN
) up to 80V, but is able to withstand
and continue to function during 100V, 100ms transients
on the input supply.
The powerful output driver of the LTC4440 reduces the
switching losses of the power MOSFET, which increase
with transition time. The LTC4440 is capable of driving a
1nF load with 10ns rise and 7ns fall times using a
bootstrapped supply voltage V
BOOST–TS
of 12V.
W
U
U
BOOST
V
UP TO 100V
TS
V
–
TG
C
GD
POWER
MOSFET
LOAD
INDUCTOR
C
GS
4440 F03
LTC4440
Q1
N1
Figure 3. Capacitance Seen by TG During Switching
Input Stage
The LTC4440 employs TTL/CMOS compatible input thresh-
olds that allow a low voltage digital signal to drive standard
power MOSFETs. The LTC4440 contains an internal volt-
age regulator that biases the input buffer, allowing the
input thresholds (V
IH
= 1.6V, V
IL
= 1.25V) to be indepen-
dent of variations in V
CC
. The 350mV hysteresis between
V
IH
and V
IL
eliminates false triggering due to noise during
switching transitions. However, care should be taken to
keep this pin from any noise pickup, especially in high
frequency, high voltage applications. The LTC4440 input
buffer has a high input impedance and draws negligible
input current, simplifying the drive circuitry required for
the input.
Output Stage
A simplified version of the LTC4440’s output stage is
shown in Figure 3 . The pull-down device is an N-channel
MOSFET (N1) and the pull-up device is an NPN bipolar
junction transistor (Q1). The output swings from the lower
rail (TS) to within an NPN V
BE
(~0.7V) of the positive rail
(BOOST). This large voltage swing is important in driving
external power MOSFETs, whose R
DS(ON)
is inversely
proportional to its gate overdrive voltage (V
GS
– V
TH
).
The LTC4440’s peak pull-up (Q1) current is 2.4A while the
pull-down (N1) resistance is 1.6
. The low impedance of
N1 is required to discharge the power MOSFET’s gate
capacitance during high-to-low signal transitions. When
the power MOSFET’s gate is pulled low (gate shorted to
source through N1) by the LTC4440, its source (TS) is
pulled low by its load (e.g., an inductor or resistor). The
slew rate of the source/gate voltage causes current to flow
back to the MOSFET’s gate through the gate-to-drain
capacitance (C
GD
). If the MOSFET driver does not have
sufficient sink current capability (low output impedance),
the current through the power MOSFET’s C
GD
can mo-
mentarily pull the gate high, turning the MOSFET back on.
A similar scenario exists when the LTC4440 is used to
drive a low side MOSFET. When the low side power
MOSFET’s gate is pulled low by the LTC4440, its drain
voltage is pulled high by its load (e.g., inductor or resis-
tor). The slew rate of the drain voltage causes current to
flow back to the MOSFET’s gate through its gate-to-drain
capacitance. If the MOSFET driver does not have sufficient
sink current capability (low output impedance), the cur-
rent through the power MOSFET’s C
GD
can momentarily
pull the gate high, turning the MOSFET back on.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC4440EMS8E#PBF | 功能描述:IC HIGH-SIDE DRIVER HS HV 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 其它有關(guān)文件:VND5E050AK-E View All Specifications 產(chǎn)品培訓(xùn)模塊:VIPower™ M0-5 Smart Power Devices 標準包裝:1,000 系列:VIPower™ 類型:高端 輸入類型:非反相 輸出數(shù):2 導(dǎo)通狀態(tài)電阻:50 毫歐 電流 - 輸出 / 通道:19A 電流 - 峰值輸出:27A 電源電壓:4.5 V ~ 28 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:24-SOP（0.295"，7.50mm 寬）裸露焊盤 供應(yīng)商設(shè)備封裝:PowerSSO-24 包裝:帶卷 (TR) 其它名稱:497-11699-2VND5E050AKTR-E-ND |
| LTC4440EMS8E#TR | 功能描述:IC DRIVER HIGH SIDE HS/HV 8MSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 標準包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
| LTC4440EMS8E#TRPBF | 功能描述:IC HIGH-SIDE DVR HS HV 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 標準包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
| LTC4440EMS8E-5 | 制造商:Linear Technology 功能描述:MOSFET DRVR 1.1A 1-OUT Hi Side Full Brdg/Half Brdg Non-Inv 8-Pin MSOP EP |
| LTC4440EMS8E-5#PBF | 功能描述:IC HIGH-SIDE DVR HS HV 8-MSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:- 標準包裝:1 系列:- 類型:高端 輸入類型:非反相 輸出數(shù):1 導(dǎo)通狀態(tài)電阻:85 毫歐 電流 - 輸出 / 通道:2A 電流 - 峰值輸出:6A 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:4-UFDFN 裸露焊盤，4-TMLF? 供應(yīng)商設(shè)備封裝:4-TMLF?（1.2x1.6） 包裝:剪切帶 (CT) 其它名稱:576-1574-1 |
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