between the RL 4 = 200Ω differential resist" />
參數(shù)資料
型號: LTC6409CUDB#TRPBF
廠商: Linear Technology
文件頁數(shù): 8/24頁
文件大?。?/td> 0K
描述: IC AMP/DRIVER DIFF GBW 10-QFN
標準包裝: 2,500
類型: ADC 驅(qū)動器
應(yīng)用: 數(shù)據(jù)采集
安裝類型: 表面貼裝
封裝/外殼: 10-WQFN
供應(yīng)商設(shè)備封裝: 10-TQFN(3x2)
包裝: 帶卷 (TR)
LTC6409
16
6409fa
applicaTions inForMaTion
between the RL 4 = 200Ω differential resistance seen at
location B and the 200Ω formed by the two 100Ω match-
ing resistors at the LTC6409 output. Thus, the differential
poweratlocationBis10–6=4dBm.Sincethetransformer
ratio is 4:1 and it has an insertion loss of about 1dB, the
power at location C (across RL) is calculated to be 4 – 6
– 1 = –3dBm. This means that IMD3 should be measured
while the power at the output of the demo board is –3dBm
which is equivalent to having 2VP-P differential peak (or
10dBm) at the output of the LTC6409.
GBW vs f–3dB
Gain-bandwidthproduct(GBW)and–3dBfrequency(f–3dB)
have been both specified in the Electrical Characteristics
table as two different metrics for the speed of the LTC6409.
GBW is obtained by measuring the gain of the amplifier
at a specific frequency (fTEST) and calculate gain fTEST.
To measure gain, the feedback factor (i.e.
b = RI/(RI +
RF)) is chosen sufficiently small so that the feedback loop
does not limit the available gain of the LTC6409 at fTEST,
ensuring that the measured gain is the open loop gain of
the amplifier. As long as this condition is met, GBW is a
parameter that depends only on the internal design and
compensation of the amplifier and is a suitable metric to
specify the inherent speed capability of the amplifier.
f–3dB, on the other hand, is a parameter of more practi-
cal interest in different applications and is by definition
the frequency at which the gain is 3dB lower than its low
frequency value. The value of f–3dB depends on the speed
of the amplifier as well as the feedback factor. Since the
LTC6409 is designed to be stable in a differential signal
gain of 1 (where RI = RF or b = 1/2), the maximum f–3dB
is obtained and measured in this gain setting, as reported
in the Electrical Characteristics table.
In most amplifiers, the open loop gain response exhibits a
conventional single-pole roll-off for most of the frequen-
cies before crossover frequency and the GBW and f–3dB
numbers are close to each other. However, the LTC6409 is
intentionally compensated in such a way that its GBW is
significantly larger than its f–3dB. This means that at lower
frequencies(wheretheinputsignalfrequenciestypicallylie,
e.g.100MHz)theamplifier’sgainandthethusthefeedback
loop gain is larger. This has the important advantage of
further linearizing the amplifier and improving distortion
at those frequencies.
Looking at the Frequency Response vs Closed Loop Gain
graph in the Typical Performance Characteristics section
of this data sheet, one sees that for a closed loop gain
(AV) of 1 (where RI = RF = 150), f–3dB is about 2GHz.
However, for AV = 400 (where RI = 25 and RF = 10k),
the gain at 100MHz is close to 40dB = 100V/V, implying
a GBW value of 10GHz.
Feedback Capacitors
When the LTC6409 is configured in low differential gains,
it is often advantageous to utilize a feedback capacitor (CF)
in parallel with each feedback resistor (RF). The use of CF
implements a pole-zero pair (in which the zero frequency
is usually smaller than the pole frequency) and adds posi-
tive phase to the feedback loop gain around the amplifier.
Therefore, if properly chosen, the addition of CF boosts
the phase margin and improves the stability response of
the feedback loop. For example, with RI = RF = 150, it is
recommended for most general applications to use CF =
1.3pF across each RF. This value has been selected to
maximize f–3dB for the LTC6409 while keeping the peaking
of the closed loop gain versus frequency response under
a reasonable level (<1dB). It also results in the highest
frequency for 0.1dB gain flatness (f0.1dB).
However,othervaluesofCFcanalsobeutilizedandtailored
to other specific applications. In general, a larger value
for CF reduces the peaking (overshoot) of the amplifier in
both frequency and time domains, but also decreases the
closed loop bandwidth (f–3dB). For example, while for a
closed loop gain (AV) of 5, CF = 0.8pF results in maximum
f–3dB (as previously shown in the Frequency Response vs
Closed Loop Gain graph of this data sheet), if CF = 1.2pF
is used, the amplifier exhibits no overshoot in the time
domain which is desirable in certain applications. Both the
circuits discussed in this section have been shown in the
Typical Applications section of this data sheet.
相關(guān)PDF資料
PDF描述
VE-B4F-MV-B1 CONVERTER MOD DC/DC 72V 150W
SY88403BLEY TR IC POST AMP CML TTL LOS 10-MSOP
AD5734RBREZ-REEL7 IC DAC 14BIT DSP/SRL 24TSSOP
AD8138ARM-REEL7 IC AMP DIFF LDIST LP 95MA 8MSOP
AD8138AR-REEL7 IC AMP DIFF LDIST LP 95MA 8SOIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LTC6409HUDB#PBF 制造商:Linear Technology 功能描述:DIFF-AMPLIFIER, 10GHZ, 3300V/US, QFN-10, No. of Amplifiers:1, Input Offset Voltage:300V, Bandwidth:10GHz, Amplifier Case Style:QFN, No. of Pins:10, Supply Voltage Range:2.7V to 5.25V, Slew Rate:3300V/s, Supply Current:52mA, MSL:- , RoHS Compliant: Yes
LTC6409HUDB#TRMPBF 功能描述:IC AMP/DRIVER DIFF GBW 10-QFN RoHS:是 類別:集成電路 (IC) >> 線性 - 放大器 - 專用 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:60 系列:- 類型:可變增益放大器 應(yīng)用:CATV 安裝類型:表面貼裝 封裝/外殼:20-WQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:20-TQFN-EP(5x5) 包裝:托盤
LTC6409HUDB#TRPBF 功能描述:IC AMP/DRIVER DIFF GBW 10-QFN RoHS:是 類別:集成電路 (IC) >> 線性 - 放大器 - 專用 系列:- 產(chǎn)品培訓模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標準包裝:60 系列:- 類型:可變增益放大器 應(yīng)用:CATV 安裝類型:表面貼裝 封裝/外殼:20-WQFN 裸露焊盤 供應(yīng)商設(shè)備封裝:20-TQFN-EP(5x5) 包裝:托盤
LTC6409HUDBTRMPBF 制造商:LINER 制造商全稱:Linear Technology 功能描述:10GHz GBW, 1.1nV/Hz Differential Amplifier/ADC Driver
LTC6409IUDB#PBF 制造商:Linear Technology 功能描述:SP Amp DIFF AMP Single 5.25V 10-Pin QFN EP 制造商:Linear Technology 功能描述:Bulk