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| 型號(hào)： | LTE21025R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | LTE21025R |
1997 Feb 21
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21025R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 70
open base
open collector
65
40
20
16
3
800
8
+200
200
235
V
V
V
V
mA
W
°
C
°
C
°
C
T
mb
≤
75
°
C
at 0.3 mm from ceramic;
t
≤
10 s
T
mb
≤
75
°
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
≤
70
.
Fig.2 DC SOAR.
handbook, halfpage
10
1
10
2
MGL006
1
10
16
10
2
IC
(A)
VCE (V)
(1)
(2)
Fig.3
Power dissipation derating as a function of
mounting-base temperature.
handbook,
0
50
100
200
10
0
8
150
6
4
2
MGD973
Ptot
(W)
Tmb (
°
C)
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