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參數(shù)資料
| 型號： | LXE18300 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | npn型微波功率晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | LXE18300 |
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE18300X
FEATURES
Internal input and output
prematching ensures a good
stability and allows an easier
design of wideband circuits
Diffused emitter ballasting resistors
provide excellent current sharing
and withstanding at a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Intended for use in common emitter
class AB power amplifiers for military
and professional applications at
frequencies from 1.6 to 1.85 GHz, in
CW conditions.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with emitter connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB
amplifier.
PINNING - SOT439A
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
G
PO
(dB)
Class AB (CW) 1.85
24
0.3
≥
27
≥
8
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
ook, 4 columns
e
c
b
MAM045
1
2
Top view
3
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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| LXE18300X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| LXE18400X | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
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| LXES03AAA1-134 | 功能描述:TVS DIODE 6.3VWM 0201 制造商:murata electronics north america 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 類型:齊納 單向通道:- 雙向通道:1 電壓 - 反向關(guān)態(tài)（典型值）:6.3V 電壓 - 擊穿（最小值）:- 電壓 - 箝位（最大值）@ Ipp:- 電流 - 峰值脈沖（10/1000μs）:- 功率 - 峰值脈沖:- 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時(shí)的電容:0.035pF @ 1MHz 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:0201（0603 公制） 供應(yīng)商器件封裝:603 標(biāo)準(zhǔn)包裝:1 |
| LXES03AAA1-154 | 功能描述:TVS DIODE 4VWM 0201 制造商:murata electronics north america 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 類型:齊納 單向通道:- 雙向通道:1 電壓 - 反向關(guān)態(tài)（典型值）:4V 電壓 - 擊穿（最小值）:- 電壓 - 箝位（最大值）@ Ipp:- 電流 - 峰值脈沖（10/1000μs）:- 功率 - 峰值脈沖:- 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時(shí)的電容:0.05pF @ 1MHz 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:0201（0603 公制） 供應(yīng)商器件封裝:603 標(biāo)準(zhǔn)包裝:1 |
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