參數(shù)資料
型號: M12L64322A-5TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
封裝: 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86
文件頁數(shù): 47/47頁
文件大?。?/td> 791K
代理商: M12L64322A-5TG
ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
47/47
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The contents contained in this document are believed to be accurate at the time of
publication. ESMT assumes no responsibility for any error in this document, and
reserves the right to change the products or specification in this document without
notice.
The information contained herein is presented only as a guide or examples for the
application of our products. No responsibility is assumed by ESMT for any
infringement of patents, copyrights, or other intellectual property rights of third
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otherwise, is granted under any patents, copyrights or other intellectual property
rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize
risks associated with customer's application, adequate design and operating
safeguards against injury, damage, or loss from such failure, should be provided by
the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as, but not
limited to, life support devices or system, where failure or abnormal operation may
directly affect human lives or cause physical injury or property damage. If products
described here are to be used for such kinds of application, purchaser must do its
own quality assurance testing appropriate to such applications.
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