參數(shù)資料
型號(hào)： M13S128168A-5TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述： 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
文件頁(yè)數(shù)： 5/49頁(yè)
文件大小： 1513K
代理商： M13S128168A-5TG
ES MT
M13S128168A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2007
Revision : 1.8 5/49
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to V
SS
V
DD
, V
DDQ
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
C
°
Power dissipation
P
D
TBD
W
Short circuit current
I
OS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operation Condition & Specifications
DC Operation Condition
Recommended operating conditions (Voltage reference to V
SS
= 0V, T
A
= 0 to 70° )
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage
V
DD
2.375
2.75
V
I/O Supply voltage
V
DDQ
2.375
2.75
V
I/O Reference voltage
V
REF
0.49*V
DDQ
0.51*V
DDQ
V
1
I/O Termination voltage (system)
V
TT
V
REF
- 0.04
V
REF
+ 0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+ 0.15
V
DDQ
+ 0.3
V
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
- 0.15
V
Input Voltage Level, CLK and CLK inputs
V
IN
(DC)
-0.3
V
DDQ
+ 0.3
V
Input Differential Voltage, CLK and CLK inputs
V
ID
(DC)
0.36
V
DDQ
+ 0.6
V
Input leakage current
I
I
-5
5
μ
A
3
Output leakage current
I
OZ
-5
5
μ
A
Output High Current (Normal strength driver)
(V
OUT
=V
DDQ
-0.373V, min V
REF
, min V
TT
)
I
OH
-16.8
mA
Output Low Current (Normal strength driver)
(V
OUT
= 0.373V)
I
OL
+16.8
mA
Output High Current (Weak strength driver)
(V
OUT
=V
DDQ
-0.763V, min V
REF
, min V
TT
)
I
OH
-9
mA
Output Low Current (Weak strength driver)
(V
OUT
= 0.763V)
I
OL
+9
mA
Notes 1. V
REF
is expected to be equal to 0.5* V
DDQ
of the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on V
REF
may not exceed 2% of the DC value.
2. V
TT
is not applied directly to the device. V
TT
is system supply for signal termination resistors, is expected to be set equal
to V
REF
, and must track variations in the DC level of V
REF
.
3. V
ID
is the magnitude of the difference between the input level on CLK and the input level on CLK .
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S128168A-5TIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6BG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6BIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
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