- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377801 > M13S64164A-5BG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 1M x 16 Bit x 4 Banks Double Data Rate SDRAM PDF資料下載
參數(shù)資料
| 型號： | M13S64164A-5BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| 中文描述： | 4M X 16 DDR DRAM, 0.7 ns, PBGA60 |
| 封裝： | 13 X 8 MM, LEAD FREE, BGA-60 |
| 文件頁數(shù)： | 25/49頁 |
| 文件大?。?/td> | 1526K |
| 代理商： | M13S64164A-5BG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁
ES MT
Preliminary
M13S64164A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3 25/49
Read With Auto Precharge
If a read with auto-precharge command is initiated, the DDR SDRAM automatically enters the precharge operation BL/2 clock
later from a read with auto-precharge command when t
RAS
(min) is satisfied. If not, the start point of precharge operation will be
delayed until t
RAS
(min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new
command can not be asserted until the precharge time (t
RP
) has been satisfied
<Burst Length = 4, CAS Latency = 3>
0
1
2
CL K
C LK
3
4
5
6
7
8
COMMAND
B a nk A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
R ea d A
Auto Pre cha rg e
CA S Lat en cy = 3
DQS
DQ's
Dout 0 Dout 1 Dout 2 Dout 3
t
R AP
At burst read / write with auto precharge, CAS interrupt of the same bank is illegal.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M13S64164A-5TG | 1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S64164A-6TG | 1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M14256 | Memory Card IC 256K Bit Serial IIC Bus EEPROM(256K位串行IIC總線EEPROM) |
| M145026 | REMOTE CONTROL ENCODER/DECODER CIRCUIT |
| M145026B1 | REMOTE CONTROL ENCODER/DECODER CIRCUIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M13S64164A-5BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S64164A-5TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S64164A-5TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S64164A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
| M13S64164A-6BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。