參數(shù)資料
型號(hào): M13S64164A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述: 100萬(wàn)× 16位× 4個(gè)銀行雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù): 14/49頁(yè)
文件大小: 1526K
代理商: M13S64164A
ES MT
Preliminary
M13S64164A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 0.3 14/49
Precharge
The precharge command is used to precharge or close a bank that has activated. The precharge command is issued when CS ,
RAS and
WE
are low and CAS is high at the rising edge of the clock. The precharge command can be used to precharge
each bank respectively or all banks simultaneously. The bank select addresses (BA0, BA1) are used to define which bank is
precharged when the command is initiated. For write cycle, t
WR
(min.) must be satisfied until the precharge command can be issued.
After t
RP
from the precharge, an active command to the same bank can be initiated.
Burst Selection for Precharge by Bank address bits
A10/AP
BA1
BA0
Precharge
0
0
0
Bank A Only
0
0
1
Bank B Only
0
1
0
Bank C Only
0
1
1
Bank D Only
1
X
X
All Banks
NOP & Device Deselect
The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore all the control inputs.
The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS , CAS and
WE
. For both Deselect and
NOP the device should finish the current operation when this command is issued.
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M13S64164A-5BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Double Data Rate SDRAM