參數(shù)資料
型號: M14C04DD
廠商: 意法半導(dǎo)體
英文描述: M14C04 Die Description
中文描述: M14C04模具描述
文件頁數(shù): 1/13頁
文件大小: 108K
代理商: M14C04DD
1/13
March 1999
M14C16
M14C04
Memory Card IC
16/4 Kbit Serial I2C Bus EEPROM
I
Two Wire I
2
C Serial Interface
Supports 400 kHz Protocol
I
Single Supply Voltage (2.5 V to 5.5 V)
I
Hardware Write Control
I
BYTE and PAGE WRITE (up to 16 Bytes)
I
BYTE, RANDOM and SEQUENTIAL READ
Modes
I
Self-Timed Programming Cycle
I
Automatic Address Incrementing
I
Enhanced ESD/Latch-Up Behaviour
I
1 Million Erase/Write Cycles (minimum)
I
40 Year Data Retention (minimum)
I
5 ms Programming Time (typical)
DESCRIPTION
Each device is an electrically erasable program-
mable memory (EEPROM) fabricated with STMi-
croelectronics’s
High
Polysilicon, CMOS technology. This guarantees
an endurance typically well above one million
Erase/Write cycles, with a data retention of
40 years. The memory operates with a power sup-
ply as low as 2.5 V.
The M14C16 and M14C04 are each available in
wafer form (either sawn or unsawn) and in micro-
module form (on film).
Each memory is compatible with the I
2
C memory
standard. This is a two wire serial interface that
Endurance,
Single
Figure 1. Logic Diagram
AI02217
SDA
VCC
M14xxx
WC
SCL
GND
Table 1. Signal Names
SDA
Serial Data/Address Input/
Output
SCL
Serial Clock
WC
Write Control
V
CC
Supply Voltage
GND
Ground
2
2
2
2
Micromodule (D20)
Wafer
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