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| 型號： | M24C16-W1MN3T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 中文描述： | 該CAT24FC02是一個2 KB的EEPROM的國內(nèi)256個8位每字舉辦的串行CMOS |
| 文件頁數(shù)： | 12/25頁 |
| 文件大?。?/td> | 449K |
| 代理商： | M24C16-W1MN3T |
M24C16, M24C08, M24C04, M24C02, M24C01
12/25
MAXIMUM RATING
Stressing the device outside the ratings listed in
Table 5.
may cause permanent damage to the de-
vice. These are stress ratings only, and operation
of the device at these, or any other conditions out-
side those indicated in the Operating sections of
this specification, is not implied. Exposure to Ab-
solute Maximum Rating conditions for extended
periods may affect device reliability. Refer also to
the STMicroelectronics SURE Program and other
relevant quality documents.
Table 5. Absolute Maximum Ratings
Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1=100pF, R1=1500
, R2=500
)
Symbol
Parameter
Min.
Max.
Unit
T
A
Ambient Operating Temperature
–40
125
°C
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
1
°C
V
IO
Input or Output range
–0.50
6.5
V
V
CC
Supply Voltage
–0.50
6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–4000
4000
V
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| M24C16WBN6 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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