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參數(shù)資料
| 型號： | M25P16-VME3G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 34/55頁 |
| 文件大小： | 335K |
| 代理商： | M25P16-VME3G |
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Instructions
M25P16
34/55
Figure 19.
Release from Deep Power-down and Read Electronic Signature (RES) instruction
sequence and data-out sequence
1.
The value of the 8-bit Electronic Signature, for the M25P16, is 14h.
Figure 20.
Release from Deep Power-down (RES) instruction sequence
Driving Chip Select (S) High after the 8
-
bit instruction byte has been received by the device, but before
the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in
Figure 20
),
still ensures that the device is put into Stand-by Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by t
RES1
,
and Chip Select (S) must remain High for at least t
RES1
(max), as specified in
Table 15
. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute
instructions.
C
D
AI04047C
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
2
0
1
High Impedance
Electronic Signature Out
Instruction
3 Dummy Bytes
0
MSB
Stand-by Mode
Deep Power-down Mode
MSB
t
RES2
C
D
AI04078B
S
2
1
3
4
5
6
7
0
t
RES1
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P16-VME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P16VME3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VME3P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16VME3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VME3T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16VME3TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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