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參數(shù)資料
| 型號(hào)： | M25P16-VME3G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 42/55頁 |
| 文件大小： | 335K |
| 代理商： | M25P16-VME3G |
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DC and AC parameters
M25P16
42/55
t
PP (8)
Page Program cycle time (256 Bytes)
0.64
5
ms
Page Program cycle time (n Bytes, where n = 1
to 4)
0.01
Page Program cycle time (n Bytes, where n = 5
to 256)
int(n/8) × 0.02
(9)
t
SE
Sector erase cycle Time
0.6
3
s
t
BE
Bulk erase cycle Time
13
40
s
1.
Preliminary data.
2.
Details of how to find the Technology Process in the marking are given in AN1995, see also
Section 12:
Part numbering
.
3.
Typical values given for T
A
= 25°C.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
4.
5.
6.
Expressed as a slew-rate.
7.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
8.
When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1
≤
n
≤
256)
9.
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Table 16.
AC characteristics (Grade 6,
T9HX (0.11μm) technology
)
(1)
(continued)
Applies only to products made with T9HX (0.11μm) Technology, identified with Process digit
“4”
(2)
Test conditions specified in
Table 10
and
Table 12
Symbol Alt.
Parameter
Min.
Typ.
(3)
Max.
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P16-VME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMF3P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P16VME3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VME3P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16VME3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VME3T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16VME3TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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