- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377802 > M25P16-VMN3TG (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M25P16-VMN3TG |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 18/55頁 |
| 文件大?。?/td> | 335K |
| 代理商： | M25P16-VMN3TG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當(dāng)前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
Instructions
M25P16
18/55
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in
Table 4
.
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Status Register (RDSR), Read Identification (RDID) or Release from Deep Power-
down, and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence
is followed by a data-out sequence. Chip Select (S) can be driven High after any bit of the
data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status
Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the
instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when
the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of
eight.
All attempts to access the memory array during a Write Status Register cycle, Program
cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program
cycle or Erase cycle continues unaffected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P16-VMN3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMP3G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P16VMN3TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VMN3TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface |
| M25P16-VMN3TP/4 | 功能描述:IC FLASH 16MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25P16-VMN3TPB | 功能描述:IC SRL FLSH 16MBIT 3V 75MHZ S08N RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
| M25P16-VMN3YPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE, SERIAL NOR, 16MB - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 75MHZ 8SO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。