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參數(shù)資料
| 型號(hào)： | M25P16-VMN6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門(mén)，串行閃存 |
| 文件頁(yè)數(shù)： | 18/55頁(yè) |
| 文件大小： | 335K |
| 代理商： | M25P16-VMN6G |
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Instructions
M25P16
18/55
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in
Table 4
.
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Status Register (RDSR), Read Identification (RDID) or Release from Deep Power-
down, and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence
is followed by a data-out sequence. Chip Select (S) can be driven High after any bit of the
data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status
Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP)
instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the
instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when
the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of
eight.
All attempts to access the memory array during a Write Status Register cycle, Program
cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program
cycle or Erase cycle continues unaffected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P16-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMP3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMP3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VMP3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P16VMN6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P16-VMN6P | 功能描述:閃存 16MBIT SFLASH MEM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P16-VMN6P/ALT | 制造商:Micron Technology Inc 功能描述:16 MBIT, SERIAL FLASH MEMORY, 75 MHZ SPI BUS INTERFACE - Trays |
| M25P16-VMN6PBA | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 16Mbit 2M x 8bit 15ns 8-Pin SO N Tray 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 16MX1 PBF SOIC 3.0V |
| M25P16VMN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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