參數(shù)資料
型號(hào): M25P20VMN6T
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 26/34頁(yè)
文件大?。?/td> 217K
代理商: M25P20VMN6T
M25P05-A
26/34
Table 12. DC Characteristics
Table 13. AC Characteristics
Symbol
Parameter
Test Condition
(in addition to those in Table 9)
Min.
Max.
Unit
I
LI
Input Leakage Current
± 2
μA
I
LO
Output Leakage Current
± 2
μA
I
CC1
Standby Current
S = V
CC
, V
IN
= V
SS
or V
CC
50
μA
I
CC2
Deep Power-down Current
S = V
CC
, V
IN
= V
SS
or V
CC
5
μA
I
CC3
Operating Current (READ)
C = 0.1V
CC
/ 0.9.V
CC
at 25 MHz,
Q = open
4
mA
I
CC4
Operating Current (PP)
S = V
CC
15
mA
I
CC5
Operating Current (WRSR)
S = V
CC
15
mA
I
CC6
Operating Current (SE)
S = V
CC
15
mA
I
CC7
Operating Current (BE)
S = V
CC
15
mA
V
IL
Input Low Voltage
– 0.5
0.3V
CC
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.4
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.2
V
Test conditions specified in Table 9 and Table 10
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, PP SE, BE, DP RES,
WREN, WRDI, RDSR, WRSR
D.C.
25
MHz
f
R
Clock Frequency for READ instructions
D.C.
20
MHz
t
CH1
t
CLH
Clock High Time
18
ns
t
CL 1
t
CLL
Clock Low Time
18
ns
t
CLCH 2
Clock Rise Time
3
(peak to peak)
0.1
V/ns
t
CHCL 2
Clock Fall Time
3
(peak to peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
10
ns
t
CHSL
S Not Active Hold Time (relative to C)
10
ns
t
DVCH
t
DSU
Data In Setup Time
5
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
10
ns
t
SHCH
S Not Active Setup Time (relative to C)
10
ns
t
SHSL
t
CSH
S Deselect Time
100
ns
t
SHQZ 2
t
DIS
Output Disable Time
15
ns
t
CLQV
t
V
Clock Low to Output Valid
15
ns
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