- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383292 > M25P40-VMN3G (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M25P40-VMN3G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 24/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMN3G |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當(dāng)前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
M25P40
24/40
Release from Deep Power-down and Read
Electronic Signature (RES)
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down and Read Elec-
tronic Signature (RES) instruction. Executing this
instruction takes the device out of the Deep Pow-
er-down mode.
The instruction can also be used to read, on Serial
Data Output (Q), the 8-bit Electronic Signature,
whose value for the
M25P40
is
12h
.
Except while an Erase, Program or Write Status
Register cycle is in progress, the Release from
Deep Power-down and Read Electronic Signature
(RES) instruction always provides access to the 8-
bit Electronic Signature of the device, and can be
applied even if the Deep Power-down mode has
not been entered.
Any Release from Deep Power-down and Read
Electronic Signature (RES) instruction while an
Erase, Program or Write Status Register cycle is in
progress, is not decoded, and has no effect on the
cycle that is in progress.
The device is first selected by driving Chip Select
(S) Low. The instruction code is followed by 3
dummy bytes, each bit being latched-in on Serial
Data Input (D) during the rising edge of Serial
Clock (C). Then, the 8-bit Electronic Signature,
stored in the memory, is shifted out on Serial Data
Output (Q), each bit being shifted out during the
falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 18.
.
The Release from Deep Power-down and Read
Electronic Signature (RES) instruction is terminat-
ed by driving Chip Select (S) High after the Elec-
tronic Signature has been read at least once.
Sending additional clock cycles on Serial Clock
(C), while Chip Select (S) is driven Low, cause the
Electronic Signature to be output repeatedly.
When Chip Select (S) is driven High, the device is
put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the
transition to the Stand-by Power mode is immedi-
ate. If the device was previously in the Deep Pow-
er-down mode, though, the transition to the Stand-
by Power mode is delayed by t
RES2
, and Chip Se-
lect (S) must remain High for at least t
RES2
(max),
as specified in
Table 17.
. Once in the Stand-by
Power mode, the device waits to be selected, so
that it can receive, decode and execute instruc-
tions.
Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) Instruction
Sequence and Data-Out Sequence
Note: The value of the 8-bit Electronic Signature, for the M25P40, is 12h.
C
D
AI04047C
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
2
0
1
High Impedance
Electronic Signature Out
Instruction
3 Dummy Bytes
0
MSB
Stand-by Mode
Deep Power-down Mode
MSB
t
RES2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P40-VMN3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN6 | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMN3G/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40VMN3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN3P | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Rail/Tube |
| M25P40-VMN3P/X | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN3PB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。