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參數(shù)資料
| 型號： | M25P40-VMN3G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 25/40頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMN3G |
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25/40
M25P40
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
Driving Chip Select (S) High after the 8
-
bit instruc-
tion byte has been received by the device, but be-
fore the whole of the 8-bit Electronic Signature has
been transmitted for the first time (as shown in
Fig-
ure 19.
), still insures that the device is put into
Stand-by Power mode. If the device was not pre-
viously in the Deep Power-down mode, the transi-
tion to the Stand-by Power mode is immediate. If
the device was previously in the Deep Power-
down mode, though, the transition to the Stand-by
Power mode is delayed by t
RES1
, and Chip Select
(S) must remain High for at least t
RES1
(max), as
specified in
Table 17.
. Once in the Stand-by Power
mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
C
D
AI04078B
S
2
1
3
4
5
6
7
0
t
RES1
Stand-by Mode
Deep Power-down Mode
Q
High Impedance
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P40-VMN3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN3TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN6 | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMN3G/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40VMN3P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P40-VMN3P | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Rail/Tube |
| M25P40-VMN3P/X | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN3PB | 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
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