參數(shù)資料
型號: M25P40-VMN6TG/X
廠商: NUMONYX
元件分類: PROM
英文描述: 512K X 8 SPI BUS SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
文件頁數(shù): 5/57頁
文件大?。?/td> 1160K
代理商: M25P40-VMN6TG/X
M25P40
Operating features
13/57
All other instructions are ignored while the device is in the Deep Power-down mode. This
can be used as an extra software protection mechanism, when the device is not in active
use, to protect the device from inadvertent Write, Program or Erase instructions.
4.5
Status Register
The Status Register contains a number of status and control bits that can be read or set (as
appropriate) by specific instructions. For a detailed description of the Status Register bits,
4.6
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
M25P40 features the following data protection mechanisms:
Power On Reset and an internal timer (tPUW) can provide protection against
inadvertent changes while the power supply is outside the operating specification.
Program, Erase and Write Status Register instructions are checked that they consist of
a number of clock pulses that is a multiple of eight, before they are accepted for
execution.
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
The Block Protect (BP2, BP1, BP0) bits allow part of the memory to be configured as
read-only. This is the Software Protected Mode (SPM).
The Write Protect (W) signal allows the Block Protect (BP2, BP1, BP0) bits and Status
Register Write Disable (SRWD) bit to be protected. This is the Hardware Protected
Mode (HPM).
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions, as all
instructions are ignored except one particular instruction (the Release from Deep
Power-down instruction).
相關(guān)PDF資料
PDF描述
M25P40VMF6 4 Mbit Uniform Sector, Serial Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P40VMN6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P40-VMN6TP 功能描述:閃存 SERIAL SECTOR ERASE FLASH 4MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25P40-VMN6TP/X 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6TP_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6TPB 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP(0.465",11.8mm 寬) 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8