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參數(shù)資料
| 型號： | M25P40SVMN6P/4 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 |
| 文件頁數(shù)： | 17/57頁 |
| 文件大?。?/td> | 1160K |
| 代理商： | M25P40SVMN6P/4 |
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Instructions
M25P40
24/57
6.5
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must previously
have been executed. After the Write Enable (WREN) instruction has been decoded and
executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on Serial Data input (D).
The instruction sequence is shown in Figure 11.
The Write Status Register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the
Status Register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the
Block Protect (BP2, BP1, BP0) bits, to define the size of the area that is to be treated as
read-only, as defined in Table 2. The Write Status Register (WRSR) instruction also allows
the user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the
Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect
(W) signal allow the device to be put in the Hardware Protected Mode (HPM). The Write
Status Register (WRSR) instruction is not executed once the Hardware Protected Mode
(HPM) is entered.
Figure 11.
Write Status Register (WRSR) instruction sequence
C
D
AI02282D
S
Q
2
1
3456789 10 11 12 13 14 15
High Impedance
Instruction
Status
Register In
0
765432
0
1
MSB
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PDF描述 |
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| M25P40SVMN3G/4A | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| M25P40-VMN6TG/X | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMB3TPB | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25P40-VMB3TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6TPB | 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Cut TR (SOS) 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE FLASH - Tape and Reel 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin UFDFPN EP T/R |
| M25P40-VMB6TPB TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8UFDFPN |
| M25P40-VMB6Txx | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
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