參數(shù)資料
型號(hào)： M25P80VMN6T
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 6/34頁(yè)
文件大?。?/td> 217K
代理商： M25P80VMN6T
M25P05-A
6/34
Protection Modes
The environments where non-volatile memory de-
vices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P05-A boasts
the following data protection mechanisms:
I
Power-On Reset and an internal timer (t
PUW
)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
I
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
I
All instructions that modify data must be
preceded by a Write Enable (WREN) instruction
to set the Write Enable Latch (WEL) bit . This bit
is returned to its reset state by the following
events:
– Power-up
– Write Disable (WRDI) instruction completion
– Write Status Register (WRSR) instruction
completion
– Page Program (PP) instruction completion
– Sector Erase (SE) instruction completion
– Bulk Erase (BE) instruction completion
I
The Block Protect (BP1, BP0) bits allow part of
the memory to be configured as read-only. This
is the Software Protected Mode (SPM).
I
The Write Protect (W) signal, in co-operation
with the Status Register Write Disable (SRWD)
bit, allows the Block Protect (BP1, BP0) bits and
Status Register Write Disable (SRWD) bit to be
write-protected. This is the Hardware Protected
Mode (HPM).
I
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Power-
down instruction).
Table 2. Protected Area Sizes
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, both Block Protect (BP1, BP0) are 0.
Status Register
Content
Memory Content
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
none
All sectors (Sectors 0 and 1)
0
1
No protection against Page Program (PP) and Sector Erase (SE)
All sectors (Sectors 0 and 1) protected against Bulk Erase (BE)
1
0
1
1
All sectors (Sectors 0 and 1)
none
相關(guān)PDF資料
PDF描述
M25P32 4 Mbit Uniform Sector, Serial Flash Memory
M25P40 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P80-VMN6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface
M25P80VMN6TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P80-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface
M25P80VMN6TP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
M25P80-VMN6TP 功能描述:IC FLASH 8MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
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