參數(shù)資料
型號(hào): M25PE16-VMW6G
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 5/56頁(yè)
文件大小: 334K
代理商: M25PE16-VMW6G
M25PE16
List of figures
5/56
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
VFQFPN and SO connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus Master and memory devices on the SPI Bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Write Enable (WREN) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Write Disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Read Identification (RDID) instruction sequence and data-out sequence . . . . . . . . . . . . . 24
Read Status Register (RDSR) instruction sequence and data-out sequence . . . . . . . . . . 26
Write Status Register (WRSR) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Read Data Bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 29
Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Read Lock Register (RDLR) instruction sequence
and data-out sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Page Write (PW) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Page Program (PP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Write to Lock Register (WRLR) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Page Erase (PE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Sector Erase (SE) instruction sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
SubSector Erase (SSE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Bulk Erase (BE) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Deep Power-down (DP) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Release from Deep Power-down (RDP) instruction sequence. . . . . . . . . . . . . . . . . . . . . . 42
Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Write Protect setup and hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Reset AC waveforms while a program or erase cycle is in progress . . . . . . . . . . . . . . . . . 51
VFQFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, 6 × 5mm,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
SO8 wide – 8 lead Plastic Small Outline, 208 mils body width, package outline . . . . . . . . 53
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
相關(guān)PDF資料
PDF描述
M25PE16-VMW6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE16-VMW6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40 4 Mbit Uniform Sector, Serial Flash Memory
M25PE40VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE16-VMW6P 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE16-VMW6TG 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE16-VMW6TP 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE20 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE20_07 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout