參數(shù)資料
型號(hào): M25PE40VMN6G
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 1/60頁(yè)
文件大?。?/td> 315K
代理商: M25PE40VMN6G
January 2007
Rev 7
1/59
1
M25PE40
4 Mbit, low voltage, Page-Erasable Serial Flash memory with
byte alterability, 50 MHz SPI bus, standard pinout
Features
SPI bus compatible serial interface
4 Mbit Page-Erasable Flash memory
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
SubSector Erase (4 Kbytes)
Sector Erase (64 Kbytes)
Bulk Erase (4 Mbits)
2.7 V to 3.6 V single supply voltage
50 MHz clock rate (maximum)
Deep Power-down mode 1
μA (typical)
Electronic Signature
– JEDEC standard two-byte signature
(8013h)
Software Write Protection on a 64 Kbyte sector
basis
Hardware Write Protection of the memory area
selected using the BP0, BP1 and BP2 bits
More than 100 000 Write cycles
More than 20 year data retention
Packages
– ECOPACK (RoHS compliant)
VFQFPN8 (MP)
6 × 5 mm (MLP8)
SO8W (MW) 208 mils width
SO8N (MN) 150 mils width
www.st.com
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