參數資料
型號: M25PE20-VMN6P
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統一部門,串行閃存
文件頁數: 1/60頁
文件大?。?/td> 310K
代理商: M25PE20-VMN6P
January 2007
Rev 3
1/60
1
M25PE20
M25PE10
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories
with Byte-Alterability, 50 MHz SPI bus, standard pinout
Features
1 or 2 Mbit of Page-Erasable Flash memory
2.7 V to 3.6 V single supply voltage
SPI bus compatible serial interface
50 MHz clock rate (maximum)
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
SubSector Erase (32 Kbits)
Sector Erase (512 Kbits)
Bulk Erase (1 Mbit for the M25PE10, 2 Mbits for
the M25PE20)
Deep Power-down mode 1μA (typical)
Electronic Signature
– JEDEC Standard Two-Byte Signature
(8012h for M25PE20
8011h for M25PE10)
Software Write Protection on a 64 Kbyte sector
basis
More than 100 000 Write cycles
More than 20 year data retention
Hardware Write Protection of the memory area
selected using the BP0 and BP1 bits
Package
– ECOPACK (RoHS compliant)
SO8N (MN)
150 mil width
VFQFPN8 (MP)
6 × 5 mm
www.st.com
相關PDF資料
PDF描述
M25PE20-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關代理商/技術參數
參數描述
M25PE20-VMN6P_NUD 制造商:Micron Technology Inc 功能描述:
M25PE20-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE20-VMN6TP 功能描述:電可擦除可編程只讀存儲器 SERIAL PAGE ERASE FLASH 2 Mbit Datas RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
M25PE20-VMN6TPBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PE20-VMN6TPBA TR 制造商:Micron Technology Inc 功能描述:IC FLASH 2MBIT 75MHZ 8SO