參數(shù)資料
型號(hào)： M25PE20-VMN6P
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 32/60頁(yè)
文件大小： 310K
代理商： M25PE20-VMN6P
Instructions
M25PE20, M25PE10
32/60
6.8
Read Lock Register (RDLR)
Note:
The Read Lock Register (RDLR) instruction is decoded only in the T9HX process (see
Important note on page 6
).
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Lock Register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector (or subsector). Each address bit is latched-in during
the rising edge of Serial Clock (C). Then the value of the Lock Register is shifted out on
Serial Data Output (Q), each bit being shifted out, at a maximum frequency f
C
, during the
falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 15
.
The Read Lock Register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any Read Lock Register (RDLR) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Table 11.
Figure 15.
Read Lock Register (RDLR) instruction sequence and data-out Sequence
Lock Registers
Bit
Bit Name
Value
Function
b7-b4
Reserved
b1
Sector Lock
Down
‘1’
The Write Lock and Lock Down Bits cannot be changed. Once a
‘1’ is written to the Lock Down Bit it cannot be cleared to ‘0’,
except by a Reset or power-up.
‘0’
The Write Lock and Lock Down Bits can be changed by writing
new values to them. (Default value).
b0
Sector Write
Lock
‘1’
Write, Program and Erase operations in this sector will not be
executed. The memory contents will not be changed.
‘0’
Write, Program and Erase operations in this sector are executed
and will modify the sector contents. (Default value).
C
D
AI10783
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
1
0
High Impedance
Lock Register Out
Instruction
24-Bit Address
0
MSB
MSB
2
39
相關(guān)PDF資料
PDF描述
M25PE20-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE20-VMN6P_NUD 制造商:Micron Technology Inc 功能描述:
M25PE20-VMN6TG 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE20-VMN6TP 功能描述:電可擦除可編程只讀存儲(chǔ)器 SERIAL PAGE ERASE FLASH 2 Mbit Datas RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M25PE20-VMN6TPBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PE20-VMN6TPBA TR 制造商:Micron Technology Inc 功能描述:IC FLASH 2MBIT 75MHZ 8SO
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