參數(shù)資料
型號: M25PE20-VMP6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 22/60頁
文件大?。?/td> 310K
代理商: M25PE20-VMP6TP
Instructions
M25PE20, M25PE10
22/60
Table 7.
Instruction set
Instruction
Description
One-byte
Instruction code
Addr
bytes
Dummy
bytes
Data
bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDID
Read Identification
1001 1111
9Fh
0
0
1 to 3
RDSR
(1)
Read Status Register
0000 0101
05h
0
0
1 to
WRLR
(1)
Write to Lock Register
1110 0101
E5h
3
0
1
WRSR
(1)
1.
Instruction available only in the T9HX process (see
Important note on page 6
).
Write Status Register
0000 0001
01h
0
0
1
RDLR
Read Lock Register
1110 1000
E8h
3
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to
FAST_READ Read Data Bytes at Higher Speed
0000 1011
0Bh
3
1
1 to
PW
Page Write
0000 1010
0Ah
3
0
1 to 256
PP
Page Program
0000 0010
02h
3
0
1 to 256
PE
Page Erase
1101 1011
DBh
3
0
0
SSE
(1)
SubSector Erase
0010 0000
20h
3
0
0
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
(1)
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
RDP
Release from Deep Power-down
1010 1011
ABh
0
0
0
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