參數(shù)資料
型號(hào)： M25PE20-VMP6TP
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 28/60頁(yè)
文件大小： 310K
代理商： M25PE20-VMP6TP
Instructions
M25PE20, M25PE10
28/60
6.5
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status
Register.
Note:
The Status Register BPi and SRWD bits are available in the T9HX process only. See
Important note on page 6
for more details.
Before the Write Status Register (WRSR) instruction can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN)
instruction has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low,
followed by the instruction code and the data byte on Serial Data Input (D).
The instruction sequence is shown in
Figure 12
.
The Write Status Register (WRSR) instruction has no effect on b6, b5, b1 and b0 of the
Status Register. b6 and b5 are always read as 0.
Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in.
If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select
(S) is driven High, the self-timed Write Status Register cycle (whose duration is t
W
) is
initiated. While the Write Status Register cycle is in progress, the Status Register may still
be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed.
When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the
Block Protect (BP1, BP0) bits, to define the size of the area that is to be treated as read-
only, as defined in
Table 3
. The Write Status Register (WRSR) instruction also allows the
user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the
Write Protect (W) signal (see
Section 6.4.4
).
If a Write Status Register (WRSR) instruction is interrupted by a Reset Low pulse, the
internal cycle of the Write Status Register operation (whose duration is t
W
) is first completed
(provided that the supply voltage V
CC
remains within the operating range). After that the
device enters the Reset mode (see also
Table 14: Device status after a Reset Low pulse
and
Table 24: Timings after a Reset Low pulse
).
Figure 12.
Write Status Register (WRSR) instruction sequence
C
D
AI02282D
S
Q
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
High Impedance
Instruction
Status
Register In
0
7
6
5
4
3
2
0
1
MSB
相關(guān)PDF資料
PDF描述
M25PE10-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE20-VMS6G 制造商:Micron Technology Inc 功能描述:
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M25PE20-VMW6TG 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel
M25PE40 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE40S-VMW6G 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO
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