參數(shù)資料
型號: M27128A-1F6
廠商: 意法半導(dǎo)體
英文描述: NMOS 16K 2K x 8 UV EPROM
中文描述: NMOS管16K的2K × 8紫外線存儲器
文件頁數(shù): 5/9頁
文件大?。?/td> 91K
代理商: M27128A-1F6
AI00786
tAXQX
tEHQZ
DATA OUT
A0-A10
EP
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
Figure 5. Read Mode AC Waveforms
Symbol
Alt
Parameter
Test Condition
M2716
Unit
-1
blank
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
EP = V
IL
, G = V
IL
350
450
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
350
450
ns
t
GLQV
t
EHQZ
(2)
t
GHQZ (2)
t
OE
Output Enable Low to Output Valid
EP = V
IL
120
120
ns
t
OD
Chip Enable High to Output Hi-Z
G = V
IL
0
100
0
100
ns
t
DF
Output Enable High to Output Hi-Z
EP = V
IL
0
100
0
100
ns
t
AXQX
t
OH
Address Transition to Output Transition
EP = V
IL
, G = V
IL
0
0
ns
Notes:
1. V
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Table 6. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
V
IN
V
IH
±
10
μ
A
I
CC
Supply Current
100
mA
I
PP
Program Current
5
mA
I
PP1
Program Current Pulse
EP = V
IH
Pulse
30
mA
V
IL
Input Low Voltage
–0.1
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 1
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 7. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 5V
±
5%; V
PP
= 25V
±
1V)
5/9
M2716
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