參數(shù)資料
型號(hào): M27128A-1F6
廠商: 意法半導(dǎo)體
英文描述: NMOS 16K 2K x 8 UV EPROM
中文描述: NMOS管16K的2K × 8紫外線存儲(chǔ)器
文件頁(yè)數(shù): 6/9頁(yè)
文件大小: 91K
代理商: M27128A-1F6
Symbol
Alt
Parameter
Test Condition
Min
Max
Units
t
AVPH
t
AS
Address Valid to Program High
G = V
IH
2
μ
s
t
QVPH
t
DS
Input Valid to Program High
G = V
IH
2
μ
s
t
GHPH
t
OS
Output Enable High to Program
High
2
μ
s
t
PL1PL2
t
PR
Program Pulse Rise Time
5
ns
t
PH1PH2
t
PF
Program Pulse Fall Time
5
ns
t
PHPL
t
PW
Program Pulse Width
45
55
ms
t
PLQX
t
DH
Program Low to Input Transition
2
μ
s
t
PLGX
t
OH
Program Low to Output Enable
Transition
2
μ
s
t
GLQV
t
OE
Output Enable to Output Valid
EP = V
IL
120
ns
t
GHQZ
t
DF
Output Enable High to Output Hi-Z
0
100
ns
t
PLAX
t
AH
Program Low to Address Transition
2
μ
s
Notes:
1. V
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Table 8. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 5V
±
5%; V
PP
= 25V
±
1V)
AI00787
tGLQV
PROGRAM
DATA IN
A0-A10
EP
G
Q0-Q7
DATA OUT
tAVPH
tQVPH
tGHPH
tPLQX
tPLGX
tPHPL
tPLAX
tGHQZ
VERIFY
VALID
Figure 6. Programming and Verify Modes AC Waveforms
6/9
M2716
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