參數(shù)資料
型號: M27128AF6
廠商: 意法半導(dǎo)體
英文描述: NMOS 16K 2K x 8 UV EPROM
中文描述: NMOS管16K的2K × 8紫外線存儲器
文件頁數(shù): 1/9頁
文件大?。?/td> 91K
代理商: M27128AF6
AI00784B
11
A0-A10
Q0-Q7
VCC
M2716
G
EP
VSS
8
VPP
Figure 1. Logic Diagram
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION
525mW Max ACTIVE POWER, 132mW Max
STANDBY POWER
ACCESS TIME:
– M2716-1 is 350ns
– M2716 is 450ns
SINGLE 5V SUPPLY VOLTAGE
STATIC-NO CLOCKS REQUIRED
INPUTS and OUTPUTS TTL COMPATIBLE
DURING BOTH READ and PROGRAM
MODES
THREE-STATE OUTPUT with TIED-OR-
CAPABILITY
EXTENDED TEMPERATURE RANGE
PROGRAMMING VOLTAGE: 25V
DESCRIPTION
The M2716 is a 16,384 bit UV erasable and elec-
trically programmable memory EPROM, ideally
suited for applications where fast turn around and
pattern experimentation are important require-
ments.
The M2716 is housed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
A0 - A10
Address Inputs
Q0 - Q7
Data Outputs
EP
Chip Enable / Program
G
Output Enable
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
1
24
FDIP24W (F)
July 1994
1/9
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M27128AFI 制造商:STMicroelectronics 功能描述:
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