參數(shù)資料
型號(hào): M27128AF6
廠商: 意法半導(dǎo)體
英文描述: NMOS 16K 2K x 8 UV EPROM
中文描述: NMOS管16K的2K × 8紫外線存儲(chǔ)器
文件頁數(shù): 4/9頁
文件大?。?/td> 91K
代理商: M27128AF6
AI00827
2.4V
0.45V
2.0V
0.8V
Figure 3. AC Testing Input Output Waveforms
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
20ns
0.45V to 2.4V
0.8V to 2.0V
AC MEASUREMENT CONDITIONS
AI00828
1.3V
OUT
CL = 100pF
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 4. AC Testing Load Circuit
Note that Output Hi-Z is defined as the point where data
is no longer driven.
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Table 4. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz )
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0
V
IN
V
CC
±
10
μ
A
I
LO
Output Leakage Current
V
OUT
= V
CC
, EP = V
CC
±
10
μ
A
I
CC
Supply Current
EP = V
IL
, G = V
IL
100
mA
I
CC1
Supply Current (Standby)
EP = V
IH
, G = V
IL
25
mA
I
PP
Program Current
V
PP
= V
CC
5
mA
V
IL
Input Low Voltage
–0.1
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.45
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 5. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 5V
±
5% or 5V
±
10%; V
PP
= V
CC
)
4/9
M2716
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