參數(shù)資料
型號: M27256-F1
廠商: 意法半導(dǎo)體
英文描述: NMOS 256K 32K x 8 UV EPROM
中文描述: NMOS管256K 32K的× 8紫外線存儲器
文件頁數(shù): 6/10頁
文件大?。?/td> 95K
代理商: M27256-F1
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
V
IN
V
IH
±
10
μ
A
I
CC
Supply Current
100
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.1
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.45
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Note.
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 8. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6V
±
0.25V; V
PP
= 12.5V
±
0.3V)
Symbol
Alt
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable
Low
2
μ
s
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μ
s
t
VPHEL
t
VPS
V
PP
High to Chip Enable Low
2
μ
s
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μ
s
t
ELEH
t
PW
Chip Enable Program Pulse
Width (Initial)
Note 2
0.95
1.05
ms
t
ELEH
t
OPW
Chip Enable Program Pulse
Width (Overprogram)
Note 3
2.85
78.75
ms
t
EHQX
t
DH
Chip Enable High to Input
Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output
Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to
Output Valid
150
ns
t
GHQZ
(4)
t
DFP
Output Enable Low to
Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to
Address Transition
0
n s
Notes.
1. V
must be applied simultaneously with or before V
and removed simultaneously or after V
PP
.
2. The Initial Program Pulse width tolerance is 1 ms
±
5%.
3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.
4. Sampled only, not 100% tested.
Table 9. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6V
±
0.25V; V
PP
= 12.5V
±
0.3V)
M27256
6/10
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