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參數(shù)資料
| 型號： | M2732AF1 |
| 廠商： | 意法半導體 |
| 英文描述： | NMOS 32K 4K x 8 UV EPROM |
| 中文描述： | NMOS管32K的4K的× 8紫外線存儲器 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 93K |
| 代理商： | M2732AF1 |
Symbol
Parameter
Test Condition
Min
Max
Units
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
E = V
IL
, G = V
IL
125
mA
I
PP
Program Current
E = V
IL
, G = V
PP
30
mA
V
IL
Input Low Voltage
–0.1
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.45
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 7. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 5V
±
5%; V
PP
= 21V
±
0.5V)
Symbol
Alt
Parameter
Test Condition
Min
Max
Units
t
AVEL
t
AS
Address Valid to Chip Enable
Low
2
μ
s
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μ
s
t
VPHEL
t
OES
V
PP
High to Chip Enable Low
2
μ
s
t
VPL1VPL2
t
PRT
V
PP
Rise Time
50
ns
t
ELEH
t
PW
Chip Enable Program Pulse
Width
45
55
ms
t
EHQX
t
DH
Chip Enable High to Input
Transition
2
μ
s
t
EHVPX
t
OEH
Chip Enable High to V
PP
Transition
2
μ
s
t
VPLEL
t
VR
V
PP
Low to Chip Enable Low
2
μ
s
t
ELQV
t
DV
Chip Enable Low to Output
Valid
E = V
IL
, G = V
IL
1
μ
s
t
EHQZ
t
DF
Chip Enable High to Output
Hi-Z
0
130
ns
t
EHAX
t
AH
Chip Enable High to Address
Transition
0
ns
Note:
1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 8. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 5V
±
5%; V
PP
= 21V
±
0.5V)
6/9
M2732A
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