參數(shù)資料
型號: M27W512-150K6E
廠商: 意法半導(dǎo)體
英文描述: 512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM
中文描述: 512千位(64K的× 8)低壓紫外線EPROM和檢察官辦公室存儲器
文件頁數(shù): 11/21頁
文件大?。?/td> 369K
代理商: M27W512-150K6E
11/21
M27W512
Table 7. Read Mode DC Characteristics
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8. Read Mode AC Characteristics
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Symbol
Parameter
Test Condition
(1)
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±10
μA
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±10
μA
I
CC
Supply Current
E = V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz
V
CC
3.6V
15
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V,
V
CC
3.6V
15
μA
I
PP
Program Current
V
PP
= V
CC
10
μA
V
IL
Input Low Voltage
–0.6
0.2 V
CC
V
V
IH
(2)
Input High Voltage
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –1mA
2.4
V
Symbol
Alt
Parameter
Test
Condition
(1)
M27W512
Unit
-80
(3)
-100
(-120/-150/-200)
V
CC
= 3.0 to 3.6V
V
CC
= 2.7 to 3.6V
V
CC
= 2.7 to 3.6V
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
,
G = V
IL
70
80
100
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
70
80
100
ns
t
GLQV
t
OE
Output Enable Low
to Output Valid
E = V
IL
40
50
60
ns
t
EHQZ
(2)
t
DF
Chip Enable High
to Output Hi-Z
G = V
IL
0
40
0
50
0
60
ns
t
GHQZ
(2)
t
DF
Output Enable High
to Output Hi-Z
E = V
IL
0
40
0
50
0
60
ns
t
AXQX
t
OH
Address Transition
to Output Transition
E = V
IL
,
G = V
IL
0
0
0
ns
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