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參數(shù)資料
| 型號： | M27W800-100B6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8或512KB × 16低壓紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 140K |
| 代理商： | M27W800-100B6TR |
5/15
M27W800
Table 7. Read Mode DC Characteristics
(1)
(T
A
=
–40 to 85 °C; V
CC
= 2.7 to 3.6V; V
PP
= V
CC
)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±10
μA
I
CC
Supply Current
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 8MHz, V
CC
≤
3.6V
30
mA
E = V
IL
, G = V
IL
, I
OUT
= 0mA,
f = 5MHz, V
CC
≤
3.6V
20
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V, V
CC
≤
3.6V
15
μA
I
PP
Program Current
V
PP
= V
CC
10
μA
V
IL
Input Low Voltage
–0.6
0.2V
CC
V
V
IH
(2)
Input High Voltage
0.7V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400μA
2.4
V
Standby Mode
The M27W800 has a standby mode which reduc-
es the supply current from 20mA to 20μA with low
voltage operation V
CC
≤
3.6V, see Read Mode DC
Characteristics table for details.The M27W800 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current ICC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E. The magnitude of the
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device out-
puts. The associated transient voltage peaks can
be suppressed by complying with the two line out-
put control and by properly selected decoupling
capacitors. It is recommended that a 0.1μF ceram-
ic capacitor is used on every device between V
CC
and V
SS
. This should be a high frequency type of
low inherent inductance and should be placed as
close as possible to the device. In addition, a
4.7μF electrolytic capacitor should be used be-
tween V
CC
and V
SS
for every eight devices. This
capacitor should be mounted near the power sup-
ply connection point. The purpose of this capacitor
is to overcome the voltage drop caused by the in-
ductive effects of PCB traces.
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PDF描述 |
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| M27W800-150K6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150F6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150B6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120K6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W800-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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