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參數(shù)資料
| 型號(hào)： | M27W800-100B6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8或512KB × 16低壓紫外線存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | M27W800-100B6TR |
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M27W800
PRESTO III Programming Algorithm
The PRESTO III Programming Algorithm allows
the whole array to be programed with a guaran-
teed margin in a typical time of 26 seconds. Pro-
gramming with PRESTO III consists of applying a
sequence of 50μs program pulses to each word
until a correct verify occurs (see Figure 9). During
programing and verify operation a MARGIN
MODE circuit is automatically activated to guaran-
tee that each cell is programed with enough mar-
gin. No overprogram pulse is applied since the
verify in MARGIN MODE at V
CC
much higher than
3.6V provides the necessary margin to each pro-
grammed cell.
Program Inhibit
Programming of multiple M27W800s in parallel
with different data is also easily accomplished. Ex-
cept for E, all like inputs including G of the parallel
M27W800 may be common. A TTL low level pulse
applied to a M27W800's E input and V
PP
at 12.5V,
will program that M27W800. A high level E input
inhibits the other M27W800s from being pro-
grammed.
Program Verify
A verify (read) should be performed on the pro-
grammed bits to determine that they were correct-
ly programmed. The verify is accomplished with E
at V
IH
and G at V
IL
, V
PP
at 12.5V and V
CC
at
6.25V.
Figure 8. Programming and Verify Modes AC Waveforms
tAVEL
VALID
AI01599
A0-A18
Q0-Q15
BYTEVPP
VCC
G
DATA IN
DATA OUT
E
tQVEL
tVPHAV
tVCHAV
tEHQX
tELEH
tGLQV
tQXGL
tGHQZ
tGHAX
PROGRAM
VERIFY
Figure 9. Programming Flowchart
AI03600
n = 0
Last
Addr
VERIFY
E = 50
μ
s Pulse
++n
= 25
++ Addr
VCC = 6.25V, VPP = 12.5V
FAIL
CHECK ALL WORDS
BYTEVPP =VIH
1st: VCC = 5V
2nd: VCC = 2.7V
YES
NO
YES
NO
YES
NO
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W800-150K6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150F6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150B6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120K6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120F6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W800-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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