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參數(shù)資料
| 型號： | M28F101-120N1 |
| 廠商： | 意法半導體 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除閃存 |
| 文件頁數(shù)： | 10/23頁 |
| 文件大小： | 197K |
| 代理商： | M28F101-120N1 |
AI00673
tWHGL
tVPHEL
00000h-00001h
tELQV
tEHQZ
tAVQV
A0-A16
E
G
DQ0-DQ7
DATA OUT
COMMAND
VPP
W
tAXQX
tGHQZ
tGLQV
READ
MANUFACTURER
OR DEVICE
READ
ELECTRONIC
SIGNATURE SET-UP
tWLWH
tWHDX
tDVWH
tGHWL
tELWL
tWHEH
Figure7. Electronic SignatureCommand Waveforms
As the Erasealgorithmflow chart shows,whenthe
data read during Erase Verify is not FFh, another
Erase operationis performedand verification con-
tinuesfromthe addressofthelastverifiedbyte.The
command is terminated by writing another valid
command to the command register (for example
Program or Reset).
Program and Program Verify Modes.
The Pro-
gramModeisset-upbywriting40htothecommand
register. This is followed by a second write cycle
which latches the address and data of the byte to
be programmed.The rising edge of W during this
secind cycle starts the programming operation.
ProgrammingisfollowedbyaProgramVerifyofthe
datawritten.
ProgramVerify Modeis set-up bywriting C0h tothe
command register. The rising edgeof W duringthe
set-up of the ProgramVerify Mode stops the Pro-
gramming operation. The following read cycle, of
the address already latched during programming,
is made with an internally generated margin volt-
ageapplied,readingvaliddataindicatesthatallbits
havebeen programmed.
ResetMode.
Thiscommandis usedto safelyabort
Erase or Program Modes. The Reset Mode is
set-up and performed by writing FFh two times to
the command register. The command should be
followed by writing a valid command to the the
command register (for exampleRead).
READ/WRITE MODES
(cont’d)
10/23
M28F101
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| M28F101-120K3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XP6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XP3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-100XN6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M28F101-120N3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120P1 | 功能描述:閃存 RO 511-M29F010B90P DIP-32 128KX8 120NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M28F101-120P3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-120P6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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