型號 廠商 描述
m28f101-150k1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Octal Buffers/Drivers With 3-State Outputs 20-PDIP 0 to 70
m28f101-150k3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Octal Buffers/Drivers With 3-State Outputs 20-SO 0 to 70
m28f101-90k6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90n3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90n6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90p3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Quadruple 2-Line to 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
m28f101-90p6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90xk3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90xk6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90xn3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-120p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70xn1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90xn1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xn1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-120xn1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-150xn1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90n1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90xp6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90xp3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Quadruple 2-Line to 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70
m28f101-90xn6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90k3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-90k1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Quadruple 2-Line to 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70
m28f101-70xp6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70xp3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70xn6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70xn3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70xk6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70xk3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Quadruple 2-Line to 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70
m28f101-70p6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70p3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 Dual 1-Of-4 Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70
m28f101-70p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70n6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70n3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-70n1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-120n3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-120n1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-120k6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-120k3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xp6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xp3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xn6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xn3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xk6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100xk3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100p6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100p3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100p1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100n6
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY
m28f101-100n3
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 意法半導(dǎo)體 1 Mb 128K x 8, Chip Erase FLASH MEMORY