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參數(shù)資料
| 型號： | M28F101-90P1 |
| 廠商： | 意法半導體 |
| 英文描述： | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| 中文描述： | 1 MB的128K的× 8，芯片擦除閃存 |
| 文件頁數(shù)： | 6/23頁 |
| 文件大小： | 197K |
| 代理商： | M28F101-90P1 |
Symbol
Parameter
TestCondition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
10
μ
A
I
CC
Supply Current (Read)
E = V
IL
, f = 6MHz
30
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
Supply Current (Standby) CMOS
E = V
CC
±
0.2V
50
μ
A
I
CC2(1)
Supply Current (Programming)
DuringProgramming
10
mA
I
CC3(1)
Supply Current (Program Verify)
During Verify
15
mA
I
CC4(1)
Supply Current (Erase)
During Erasure
15
mA
I
CC5(1)
Supply Current (Erase Verify)
During Erase Verify
15
mA
I
LPP
Program Leakage Current
V
PP
≤
V
CC
±
10
μ
A
I
PP
Program Current (Read or
Standby)
V
PP
> V
CC
120
μ
A
V
PP
≤
V
CC
±
10
μ
A
I
PP1(1)
Program Current (Programming)
V
PP
= V
PPH
, During Programming
30
mA
I
PP2(1)
Program Current (Program
Verify)
V
PP
= V
PPH
, During Verify
5
mA
I
PP3(1)
Program Current (Erase)
V
PP
= V
PPH
, During Erase
30
mA
I
PP4(1)
Program Current (Erase Verify)
V
PP
= V
PPH
, During Erase Verify
5
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage TTL
2
V
CC
+ 0.5
V
Input High Voltage CMOS
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA (grade 1)
0.45
V
I
OL
= 2.1mA (grade 6)
0.45
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
4.1
V
I
OH
= –2.5mA
0.85 V
CC
V
Output High Voltage TTL
I
OH
= –2.5mA
2.4
V
V
PPL
Program Voltage (Read
Operations)
0
6.5
V
V
PPH
Program Voltage (Read/Write
Operations)
11.4
12.6
V
V
ID
A9 Voltage (Electronic Signature)
11.5
13
V
I
ID
(1)
A9 Current (Electronic Signature)
A9 = V
ID
200
μ
A
V
LKO
Supply Voltage, Erase/Program
Lock-out
2.5
V
Note:
1. Not 100% tested.Characterisation Data available.
Table 8. DC Characteristics
(T
A
= 0 to 70
°
C, –40to 85
°
C or –40 to 125
°
C; V
CC
= 5V
±
10%)
6/23
M28F101
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PDF描述 |
|---|---|
| M28F101-90N1 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XP6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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| M28F101-90XN6 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90K3 | 1 Mb 128K x 8, Chip Erase FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28F101-90P3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90P6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XK1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XK3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
| M28F101-90XK6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mb 128K x 8, Chip Erase FLASH MEMORY |
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