參數(shù)資料
型號: M28W800BB70N6T
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
中文描述: 8兆位512KB的x16插槽,啟動塊3V電源快閃記憶體
文件頁數(shù): 38/49頁
文件大?。?/td> 369K
代理商: M28W800BB70N6T
M28W800CT, M28W800CB
38/49
Table 30. Primary Algorithm-Specific Extended Query Table
Note: 1. See Table 27, offset 15 for P pointer definition.
Offset
P = 35h
(1)
Data
Description
Value
(P+0)h = 35h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
(P+1)h = 36h
0052h
"R"
(P+2)h = 37h
0049h
"I"
(P+3)h = 38h
0031h
Major version number, ASCII
"1"
(P+4)h = 39h
0030h
Minor version number, ASCII
"0"
(P+5)h = 3Ah
0066h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
Chip Erase supported
bit 1
Suspend Erase supported
bit 2
Suspend Program supported
bit 3
Legacy Lock/Unlock supported
bit 4
Queued Erase supported
bit 5
Instant individual block locking supported (1 = Yes, 0 = No)
bit 6
Protection bits supported
bit 7
Page mode read supported
bit 8
Synchronous read supported
bit 31 to 9
Reserved; undefined bits are ‘0’
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
No
Yes
Yes
No
No
Yes
Yes
No
No
(P+6)h = 3Bh
0000h
(P+7)h = 3Ch
0000h
(P+8)h = 3Dh
0000h
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
0003h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0
Block Lock Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2
Reserved for future use; undefined bits are ‘0’
Yes
Yes
(P+B)h = 40h
0000h
(P+C)h = 41h
0030h
V
DD
Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
3V
(P+D)h = 42h
00C0h
V
PP
Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12V
(P+E)h = 43h
0001h
Number of Protection register fields in JEDEC ID space.
"00h," indicates that 256 protection bytes are available
01
(P+F)h = 44h
0080h
Protection Field 1: Protection Description
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7
Lock/bytes JEDEC-plane physical low address
bit 8 to 15
Lock/bytes JEDEC-plane physical high address
bit 16 to 23
"n" such that 2
n
= factory pre-programmed bytes
bit 24 to 31
"n" such that 2
n
= user programmable bytes
80h
(P+10)h = 45h
0000h
00h
(P+11)h = 46h
0003h
8 Byte
(P+12)h = 47h
0003h
8 Byte
(P+13)h = 48h
Reserved
相關(guān)PDF資料
PDF描述
M28W800BB70ZB1T 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
M28W800BB70ZB6T 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
M28W800BB85N1T 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
M28W800BB85N6T 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
M28W800BB85ZB6T 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W800BB90N1 功能描述:閃存 8M (512Kx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W800BB90ZB6T 功能描述:閃存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W800BT100N6T 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W800BT90N6 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 512KX16 90NS 48TSOP - Trays
M28W800CB90N1 功能描述:閃存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel