參數(shù)資料
型號(hào)： M29DW324DT90ZA6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝： 7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件頁數(shù)： 36/50頁
文件大小： 878K
代理商： M29DW324DT90ZA6F
41/50
M29DW324DT, M29DW324DB
Table 26. CFI Query System Interface Information
Table 27. Device Geometry Definition
Note: For the M29DW324DB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh.
For the M29DW324DT, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh.
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2n s
16s
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n s
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
44h
0000h
Typical timeout for full Chip Erase = 2n ms
NA
23h
46h
0004h
Maximum timeout for byte/word program = 2n times typical
256 s
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2n times typical
8s
26h
4Ch
0000h
Maximum timeout for Chip Erase = 2n times typical
NA
Address
Data
Description
Value
x16
x8
27h
4Eh
0016h
Device Size = 2n in number of bytes
4 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
Maximum number of bytes in multi-byte program or page = 2n
NA
2Ch
58h
0002h
Number of Erase Block Regions. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
2
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8Kbyte
31h
32h
62h
64h
003Eh
0000h
Region 2 Information
Number of Erase Blocks of identical size = 003Eh+1
63
33h
34h
66h
68h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64Kbyte
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW324DT90ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZE1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
M29DW324DT90ZE1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZE1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZE1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
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