參數(shù)資料
型號: M29F016D90N1T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
中文描述: 16兆位(含2Mb × 8,統(tǒng)一座)5V電源快閃記憶體
文件頁數(shù): 18/37頁
文件大?。?/td> 536K
代理商: M29F016D90N1T
M29F016D
18/37
Table 9. DC Characteristics
Note: 1. Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±1
μA
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
20
mA
I
CC2
Supply Current (Standby) TTL
E = V
IH
2
mA
I
CC3
Supply Current (Standby) CMOS
E = V
CC
± 0.2V,
RP = V
CC
±0.2V
150
μA
I
CC4
(1)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA
0.45
V
V
OH
Output High Voltage TTL
I
OH
= –2.5mA
2.4
V
Output High Voltage CMOS
I
OH
= –100μA
V
CC
– 0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μA
V
LKO
(1)
Program/Erase Lockout Supply
Voltage
3.2
4.2
V
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